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fundamentals of engineering supplied-reference handbook - Ventech!

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MEASUREMENT<br />

Definitions:<br />

Transducer – a device used to convert a physical parameter<br />

such as temperature, pressure, flow, light intensity, etc. into<br />

an electrical signal (also called a sensor).<br />

Transducer sensitivity – the ratio <strong>of</strong> change in electrical<br />

signal magnitude to the change in magnitude <strong>of</strong> the physical<br />

parameter being measured.<br />

Resistance Temperature Detector (RTD) – a device used to<br />

relate change in resistance to change in temperature.<br />

Typically made from platinum, the controlling equation for<br />

an RTD is given by:<br />

( )<br />

RT= R0 ⎡<br />

⎣1+α T −T0<br />

⎤<br />

⎦ , where<br />

RT is the resistance <strong>of</strong> the RTD at temperature T (measured<br />

in °C)<br />

R0 is the resistance <strong>of</strong> the RTD at the <strong>reference</strong> temperature<br />

T0 (usually 0° C)<br />

α is the temperature coefficient <strong>of</strong> the RTD<br />

Strain Gauge – a device whose electrical resistance varies in<br />

proportion to the amount <strong>of</strong> strain in the device.<br />

Gauge factor (GF) – the ratio <strong>of</strong> fractional change in<br />

electrical resistance to the fractional change in length<br />

(strain):<br />

∆RR ∆RR<br />

GF = = , where<br />

∆L ε<br />

L<br />

R is the nominal resistance <strong>of</strong> the strain gauge at nominal<br />

length L<br />

∆R is the change in resistance due the change in length ∆L<br />

ε is the normal strain sensed by the gauge.<br />

The Gauge Factor for metallic strain gauges is typically<br />

around 2.<br />

Wheatstone Bridge – an electrical circuit used to measure<br />

changes in resistance.<br />

+<br />

V IN<br />

−<br />

R 1<br />

R 2<br />

− V O<br />

Wheatstone Bridge<br />

MEASUREMENT AND CONTROLS<br />

+<br />

R 3<br />

R 4<br />

87<br />

If R1R4 = R2R3 then V O = 0 V and the bridge is said to be<br />

balanced. If R1 = R2 = R3 = R and R4 = R+∆ R where<br />

∆R � R , then<br />

∆R<br />

VO ≈ ⋅ VIN.<br />

4R<br />

SAMPLING<br />

When a continuous-time or analog signal is sampled using a<br />

discrete-time method, certain basic concepts should be<br />

considered. The sampling rate or frequency is given by<br />

f s =<br />

∆t<br />

1<br />

Shannon's sampling theorem states that in order to<br />

accurately reconstruct the analog signal from the discrete<br />

sample points, the sample rate must be larger than twice the<br />

highest frequency contained in the measured signal.<br />

Denoting this frequency, which is called the Nyquist<br />

frequency, as f N , the sampling theorem requires that<br />

f > 2 f<br />

s N<br />

When the above condition is not met, the higher frequencies<br />

in the measured signal will not be accurately represented<br />

and will appear as lower frequencies in the sampled data.<br />

These are known as alias frequencies.<br />

Analog-to-Digital Conversion<br />

When converting an analog signal to digital form, the<br />

resolution <strong>of</strong> the conversion is an important factor. For a<br />

measured analog signal over the nominal range [VL ,VH],<br />

where VL is the low end <strong>of</strong> the voltage range and VH is the<br />

nominal high end <strong>of</strong> the voltage range, the voltage<br />

resolution is given by<br />

V −V<br />

ε V =<br />

n<br />

2<br />

H L<br />

where n is the number <strong>of</strong> conversion bits <strong>of</strong> the A/D<br />

converter with typical values <strong>of</strong> 4, 8, 10, 12, or 16. This<br />

number is a key design parameter. After converting an<br />

analog signal the A/D converter produces an integer number<br />

<strong>of</strong> n bits. Call this number N. Note that the range <strong>of</strong> N is<br />

[0 , 2 n – 1]. When calculating the discrete voltage, V, using<br />

the reading, N, from the A/D converter the following<br />

equation is used.<br />

V = ε V N+ VL<br />

Note that with this strategy, the highest measurable voltage<br />

is one voltage resolution less than VH, or VH − ε V .

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