Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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4.3 Future IssuesIA recovery of VFB shift was achieved by PMA with aluminum andplatinum. However, the mechanisms of their recoveries, especially PMAwith platinum were not clarified, and the reasons why PMA with goldelectrodes did not yield any recovery of VFB were not also investigated.From my results, it seems that some reactions enormously exert an influenceon VFB shift. Consequently, further examinations of these reactions inelectrical, physical and chemical aspects will be required for elucidations ofthese mechanisms. And it can be anticipated that the mobility of MOSFETfabricated by PMA treatment could become higher as compared with the onefabricated by PDA treatment because PMA treatment could recover the VFBshift toward almost theoretical value without fixed charge that cause thedegradation of mobility owing to Coulomb scattering. Accordingly, theevaluation of mobility should be examined through fabricating MOSFETtreated by PMA and the comparison with the one of PDA should be also done.Moreover, these material investigated in my study were not necessarily nextgeneration gate electrode materials. Therefore, PMA for more promisingmaterials as next generation gate electrodes such as TiN, TaN or nickelsilicide must be examined.- 98 -
AcknowledgementIn the first place, the author would like express my gratitude for ProfessorHiroshi Iwai for his excellent guidance and continuous encouragement.The author would like to express my sincere appreciation to AssociateProfessor Shun-ichiro Ohmi of his very useful advices and hearteningencouragement through my research.The author would like to thank Associate Professor Kazuo Tsutsui for hismagnificent advices and encouragement.The author would like to thank Professor Hiroshi Ishiwara very much for histremendous supports for my research.The author would like to thank Professor Kazuya Masu very much for hisadvices and supports.The author would like to thank Associate Professor Eisuke Tokumitu for hissupports for my research.The author would like to thank Dr. K. Aizawa, Mr. T. Kurita and Mr. D. Shojifor their supports and useful advices.The author would like to thank Dr. Yoshishige Tsuchiya for his generoussupports and advices.The author would like to thank Mr. sadahiro Akama, Ms. Chizuru Ohsima,Ms. Ikumi Kashiwagi, Mr. Akira Kikuchi, Mr. Junichi Taguchi, HiroyukiYamamoto and Mr. Yoshiaki Yoshihara for his great advices and wonderfulfriendship.The author would like to thank Mr. Isao Ueda for his great discussions andwonderful supports- 99 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28:
1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30:
In C-V curve, the two type of hyste
Page 31 and 32:
2.2.2 Leakage Current Density-Volta
Page 33 and 34:
2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36:
3.1 IntroductionIn this chapter, th
Page 37 and 38:
3.3 Electrical Characteristics in t
Page 39 and 40:
Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42:
Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44:
3.3.2 Effects of Chemical Oxidation
Page 45 and 46:
3.3.3 Dependence on the Annealing T
Page 47 and 48:
Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50:
Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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