Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
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3.4.1.2 <strong>Effect</strong>s <strong>of</strong> Chemical Oxidation Treatment <strong>for</strong> PMA withAluminum Upper ElectrodesChemical oxidation treatment was anticipated that electricalcharacteristics were improved same as the case <strong>of</strong> PDA. Figure 3-25 showsthe C-V characteristics <strong>of</strong> PMA dependent on the annealing temperature inthe case <strong>of</strong> HF-last treatment (Figure 3-25 (a)) and chemical oxidationtreatment (Figure 3-25 (b)) respectively. From rough view, the tendency <strong>for</strong>the effect <strong>of</strong> PMA appeared on chemical oxidation treatment. To be precise,chemical oxidation treatment decreased EOT and increased the width <strong>of</strong>hysteresis at 300 o C as compared with HF-last treatment as shown in Figure3-26. And in the case <strong>of</strong> HF-last, VFB was shifted abruptly with increase inthe temperature <strong>of</strong> PMA as compared with chemical oxidation treatment asshown in Figure3-27. However, almost the theoretical value <strong>of</strong> VFB wasobtained by PMA at 300 o C in both treatments as shown in same figure.Capacitance (µF/cm 2 )21Al/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C 300 o C250 o C depo HF-lastPMA 250-400 o C10minN ambience2 400 o CCapacitance (µF/cm 2 )21Al/<strong>La</strong> O / n-Si(100)/Al2 3250 o C depo C.O.PMA 250~350 o C10minN ambience2250 o C300 o C350 o C0-2 -1 0 1 2Voltage (V)(a) HF-last0-1.5 -1 -0.5 0 0.5 1 1.5Voltage (V)(b) Chemical oxidationFigure 3-25: the C-V characteristics <strong>of</strong> PMAdependent on the annealing temperature in the case <strong>of</strong>(a) HF-last treatment (b) chemical oxidation treatment- 52 -
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