Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
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Capacitance (µF/cm 2 )21Al/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C depo. HF-lastPDA & PMA300 o C 10min.N ambient2PDAPMA∆V=0.03 V0-1.5 -1 -0.5 0 0.5 1V FB =-0.80[V]V FB =-0.06[V]Ideal V FB =0.05[V]Voltage (V)Figure 3-21: The comparison <strong>of</strong> C-V characteristics between PDA and PMA.Al/<strong>La</strong> O / n-Si(100)/Al2 3250 o C depo. HF-last10 1 -1 -0.5 0 0.5 1Current Density (A/cm 2 )10 010 -110 -210 -310 -410 -510 -610 -7PDA & PMA 300 o C10min.N ambient2PDAPMAVoltage (V)PDAPMAFigure 3-22: The comparison <strong>of</strong> J-V characteristics between PDA and PMA- 50 -