Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
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Current Density[A/cm 10 2 PDAAs-depo.10 1300 o C200 o C10 0400 o C300 o CPMA450 o C1.5 2 2.5 310 -110 -210 -310 -410 -5Equivalent Oxide Thickness [nm]Figure 3-23: EOT-J plotsCapacitance (µF/cm 2 )21Al/<strong>La</strong> O / n-Si(100)/Al2 3250 o C depo. HF-lastPDA 300 o C 10min.N ambient2Capacitance (µF/cm 2 )21Al/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C depo. HF-lastPMA 300 o C10min. N ambient2100kHz0-1.5 -1 -0.5 0 0.5Voltage (V)01MHz-1 -0.5 0 0.5 1Voltage (V)(a) PDA 300 o C(b) PMA 300 o CFigure 3-24: Comparison <strong>of</strong> Frequency dependence on C-V characteristics <strong>of</strong>(a) PDA 300 o C (b) PMA 300 o C- 51 -