Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
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Capacitance (µF/cm 2 )2Pt/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C spikeN ambient211MHz100kHz10kHz0-0.5 0 0.5 1 1.5 2Voltage (V)(a) spikeCapacitance (µF/cm 2 )21Pt/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 1min.N ambient200 0.5 1 1.5 2 2.5Voltage (V)(b) 1 minute1MHz100kHz10kHzCapacitance (µF/cm 2 )21Pt/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 10min.N ambient2 1MHz100kHz10kHzCapacitance (µF/cm 2 )21Pt/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 100min.N ambient2 1MHz100kHz10kHz0-0.5 0 0.5 1 1.5 2Voltage (V)(c) 10minutes00 0.5 1 1.5 2 2.5Voltage (V)(d) 100 minutesFigure 3-62: Frequency dependence <strong>of</strong> C-V characteristicsfabricated by nitrogen annealing <strong>for</strong>(a) spike (b) 1 minutes(c) 10 minutes (d) 100minutes- 84 -