Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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An insertion of samplesEvacuation by RP for 1 minuteFilling up the gas up to atmospheric pressureEvacuation by RP for 30 seconds5 times rotationAfter 5 times rotationAnnealing with flowing gas at the rate of 1.2 l/min.Figure 2-6: The procedure of RTA- 20 -
2.1.5 Vacuum Evaporation MethodAluminum, gold and platinum upper electrodes and backsidealuminum electrodes were deposited by vacuum evaporation equipment.The advantage of this method is the simplicity and the quickness ofevaporation as compared with sputtering.Figure 2-7 shows the illustration of the vacuum evaporationequipment. In high vacuum chamber approximately 10 -5 Torr, metal sourcewas deposited on the samples through the metal shadow mask by thermalheating with high voltage regarding to aluminum and gold upper electrodes.In the case the deposition of platinum upper electrodes, E-gun beam wasused for evaporation because of its higher melting point. The meltingpoints of aluminum, gold and platinum melting are about 660 o C, 1063 o C,1776 o C respectively. The size of upper electrodes was about 110 µm indiameter. With regard to backside electrodes, aluminum was depositedwithout the mask after removing the native oxide on the silicon surface atbackside.Tungsten FilamentAlAuSampleMetal MaskSamplePtE-gunFigure 2-7: Vacuum evaporation method- 21 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23: 2.1.4 Rapid Thermal Annealing (RTA)
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76:
Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78:
3.4.2.5 The comparison with the cas
Page 79 and 80:
3.4.3 Effects of PMA for Platinum U
Page 81 and 82:
4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84:
EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86:
On the other hand, there was almost
Page 87 and 88:
V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90:
Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92:
Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94:
Chapter 4Conclusions- 89 -
Page 95 and 96:
4.1.2 Summary of the Investigation
Page 97 and 98:
Table 4-2: Summary of my investigat
Page 99 and 100:
esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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