09.07.2015 Views

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

3.4.1.5 The Combination C<strong>of</strong> PDA and PMAThus far, the electrical characteristics by various conditions <strong>of</strong> PDAand PMA with aluminum upper electrodes were examined <strong>for</strong> theiroptimization. As a result, it was found that in the case <strong>of</strong> aluminum upperelectrodes, negative VFB shift was enlarged by PDA, while all the othercharacteristics such as EOT, leakage current or interface state density wereimproved. On the other hand, it was found that the VFB shift was almostcompletely recovered by PMA at 300 o C. However, PMA with Al upperelectrodes decreased the capacitance value. Also PMA was not sufficient todecrease the leakage current, and even increased the interface state density.From these results, it is natural to consider that combining PDA and PMAcould bring good characteristics owing to the counterbalance by each merit.Figure 3-35 shows the C-V characteristics in the case <strong>of</strong> thecombination <strong>of</strong> PDA and PMA compared to only PDA or PMA treatment, andtheir dependence on the time <strong>of</strong> PMA from 0 sec (spike) to 10 minutes. Thetemperature <strong>of</strong> PDA was 300 o C and the temperatures <strong>of</strong> PMA were 250 o Cand 300 o C respectively. All <strong>of</strong> samples were annealed in nitrogen ambience.In the case <strong>of</strong> spiked PMA at 250 o C, any effects <strong>of</strong> the suppression <strong>of</strong> the VFBshift did not appear as shown in Figure 3-35 (a). However, when the time <strong>of</strong>PMA lengthened up to 10 minutes, the VFB shift was recovered on a levelwith PMA-only treatment without any degradation <strong>of</strong> electricalcharacteristics as shown in Figure 3-35 (c). On the other hand, in the case<strong>of</strong> spiked PMA at 300 o C, the VFB shift was recovered on a level with PMA at250 o C <strong>for</strong> 10 minutes despite <strong>of</strong> spiked PMA as shown in Figure 3-35 (d).However, when the time <strong>of</strong> PMA lengthened up to 10 minutes, somedegradation <strong>of</strong> electrical characteristics such as a decrease <strong>of</strong> capacitancevalue or an increase <strong>of</strong> hysteresis width appeared, although the VFB shift wasrecovered on a level with PMA-only treatment as shown in Figure 3-35 (f).From these results, it was found that the combination <strong>of</strong> PDA andPMA was considerably effective in the suppression <strong>of</strong> VFB shift withmaintaining the capacitance value. However, it was also found that PMA<strong>for</strong> aluminum upper electrodes were highly sensitive to the combination <strong>of</strong>the annealing temperature and time, there<strong>for</strong>e it is anticipated thatoptimizing the condition <strong>of</strong> the combination <strong>of</strong> PDA and PMA could make itpossible to suppress the VFB shift with remaining high capacitance value.- 60 -

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!