Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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3.4.1.5 The Combination Cof PDA and PMAThus far, the electrical characteristics by various conditions of PDAand PMA with aluminum upper electrodes were examined for theiroptimization. As a result, it was found that in the case of aluminum upperelectrodes, negative VFB shift was enlarged by PDA, while all the othercharacteristics such as EOT, leakage current or interface state density wereimproved. On the other hand, it was found that the VFB shift was almostcompletely recovered by PMA at 300 o C. However, PMA with Al upperelectrodes decreased the capacitance value. Also PMA was not sufficient todecrease the leakage current, and even increased the interface state density.From these results, it is natural to consider that combining PDA and PMAcould bring good characteristics owing to the counterbalance by each merit.Figure 3-35 shows the C-V characteristics in the case of thecombination of PDA and PMA compared to only PDA or PMA treatment, andtheir dependence on the time of PMA from 0 sec (spike) to 10 minutes. Thetemperature of PDA was 300 o C and the temperatures of PMA were 250 o Cand 300 o C respectively. All of samples were annealed in nitrogen ambience.In the case of spiked PMA at 250 o C, any effects of the suppression of the VFBshift did not appear as shown in Figure 3-35 (a). However, when the time ofPMA lengthened up to 10 minutes, the VFB shift was recovered on a levelwith PMA-only treatment without any degradation of electricalcharacteristics as shown in Figure 3-35 (c). On the other hand, in the caseof spiked PMA at 300 o C, the VFB shift was recovered on a level with PMA at250 o C for 10 minutes despite of spiked PMA as shown in Figure 3-35 (d).However, when the time of PMA lengthened up to 10 minutes, somedegradation of electrical characteristics such as a decrease of capacitancevalue or an increase of hysteresis width appeared, although the VFB shift wasrecovered on a level with PMA-only treatment as shown in Figure 3-35 (f).From these results, it was found that the combination of PDA andPMA was considerably effective in the suppression of VFB shift withmaintaining the capacitance value. However, it was also found that PMAfor aluminum upper electrodes were highly sensitive to the combination ofthe annealing temperature and time, therefore it is anticipated thatoptimizing the condition of the combination of PDA and PMA could make itpossible to suppress the VFB shift with remaining high capacitance value.- 60 -
Capacitance (µF/cm 2 )21PDA 300 o C 10minPMA 250 o C 0secPDAPDA+PMAPMACapacitance (µF/cm 2 )21PDA 300 o C 10minPMA 300 o C 0secPDAPDA+PMAPMACapacitance (µF/cm 2 )0-1.5 -1 -0.5 0 0.5Voltage (V)(a) 250 o C spike2PDA 300 o C 10minPDAPMA 250 o C 1minPDA+PMA1PMACapacitance (µF/cm 2 )0-1.5 -1 -0.5 0 0.5Voltage (V)(d) 300 o C spike2PDAPDA 300 o C 10minPMA 300 o C 1minPDA+PMA1PMACapacitance (µF/cm 2 )0-1.5 -1 -0.5 0 0.5Voltage (V)(b) 250 o C 1 minute2PDA 300 o C 10minPDAPMA 250 o C 10minPDA+PMA1PMACapacitance (µF/cm 2 )0-1.5 -1 -0.5 0 0.5Voltage (V)(e) 300 o C 1 minute2PDA 300 o C 10minPDAPMA 300 o C 10minPDA+PMA1PMA00-1.5 -1 -0.5 0 0.5-1.5 -1 -0.5 0 0.5Voltage (V)Voltage (V)(c) 250 o C 10 minute(f) 300 o C 10 minuteFigure 3-35: The C-V characteristics in the case of the combination ofPDA and PMA compared to only PDA or PMA treatment, and theirdependence on the time of PMA from 0 sec (spike) to 10 minutes- 61 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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