Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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MetaltdSiV G+xxr:Charge DensityPotential by Mobile Ion :xρ( x)/εε0ρ( x)When this potential is canceled by gate voltage:∆ VG+ x=0,εε0where∆V GIs Gate Voltagetd ρ( x) 1 tdxWhen mobile ion is distributedV G=− xdx =−ρ( x)dx0 εε00C0tdthrough the films, total voltageεεwhich is required to cancel0whereC0=potential by mobile ion istdt Integral part result in charge anddxQIC= ρ( x ) dx,0which depend on xit is defined as Q ICtEffect of mobile ion charge maximumwhen mobile ion is on x=t d , andMinimum when mobile ion is on x=0Moreover, Coulomb interaction existBetween mobile charge and gate voltageV G 0(b)++++Metal+SiMetal+Si++No influence of mobile chargeFigure 2-9: The mechanism of mobile-ion-type hysteresisdCapacitance (µF/cm 2 )Maximum influence of mobile chargeVg0MetalMetal321(b)(a)0-2 -1 0 1 2Voltage (V)SiO 2Depletion LayerSiO 2e -n-Sie -When gate voltage is from negative side to 0Repulsion against an electronNo infection into oxide filmsn-SiWhen gate voltage is increased,An electron is drawn in oxide filmsIt Work as a negative charge in oxide filmsC-V curve remains normalCapacitance (µF/cm 2 )321C-V curve shifts to positive side0-2 -1 0 1 2Voltage (V)Figure 2-10: The mechanism of charge-injection-type hysteresis- 26 -
2.2.2 Leakage Current Density-Voltage (J-V) CharacteristicsJ-V characteristics for MIS capacitor were measured by PrecisionSemiconductor Parameter Analyzer (HP4156C, Agilent). In the case ofideal MIS capacitor, the conductance of the insulator is supposed to be zero.In fact, however, practical insulators show the carrier conduction byelectrons and holes when the electric field or temperature is sufficiently high.The two types of conduction models will be described here.Firstly, Poole-Frenkel model is due to field-enhanced thermalexcitation of trapped electrons into the conduction band as shown in Figure2-11. This is called trap-assist conduction. The expression ofPoole-Frenkel emission is given by( βPFE −ΦPF)qJ = Joexp , (2.6) kTwhere J0( J0~ E ) is the low-field current density, ΦPFis the barrier heightfor Poole-Frenkel mechanism and βPFfield lowering coefficients are givenbyβPF3q= (2.7)πε ε0rA plot of ln(J/E) versus E 1/2 yields a straight line with a slope determined bydielectric constant of the insulator and the plot segment contains theinformation of the barrier height as trapped charge in the insulator. Thisconduction process also has temperature dependence and J versus 1/T alsoyields a straight line.Secondly, Fowler-Nordheim model is one of the tunneling emissionscaused by the tunneling of trapped electrons into the insulator conductionband as shown in Figure 2-12. The expression is given byJFN3 23/2qE 4 2 m*Φ oxFN= exp2−, (2.8)16πΦ FN3 qE ox where Eoxis the electric field in the insulator and ΦFNis the barrier heightfor Fowler-Nordheim mechanism. Equation (2.8) shows thatFowler-Nordheim tunneling current is characterized by a straight line in a- 27 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29: In C-V curve, the two type of hyste
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82:
4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84:
EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86:
On the other hand, there was almost
Page 87 and 88:
V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90:
Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92:
Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94:
Chapter 4Conclusions- 89 -
Page 95 and 96:
4.1.2 Summary of the Investigation
Page 97 and 98:
Table 4-2: Summary of my investigat
Page 99 and 100:
esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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