Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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The author would like to thank his laboratory’s colleagues, Mr. Jun-ichiTonotani, Mr. Kyousuke Ohsima, Mr. Yongshik Kim, Mr. Jin Aun Ng, Mr.Joel Morina, Mr. Hendriansyah Sauddin, Mr. Youichi Kobayashi, Mr.Takahisa Sato, Mr. Kunihiro Miyauchi, Mr. George Yoshida and KatsuhiroTakagi for his wonderful friendship and heartening supports.The author would like to express sincere and hearty appreciation to hislaboratory’s secretaries, Ms. Noriko Sato, Ms. Yuki Mihara, Ms. Kyoko Kubo,Ms. Masako Nishizawa, Ms. Nobuko Iizuka, Ms. Nahoko Hayashi and Ms.Yukie Morita of their great supports.This study was partially supported by Semiconductor Technology AcademicResearch Center (STARC). The author would like to thank Dr. N.Nishikawa, Dr. J. Yugami, K. Tsunashima, T. Kato and K. Fujita for theiruseful advices and discussions.This study was partially supported by Grant-in-Aid for Scientific ResearchPriority Areas (A): Highly Functionalized Global Interface Integration.Finally, the author would like to express sincere and hearty gratitude for allof his friends and family for their wonderful supports.Atsushi KURIYAMAYokohama, Japan19. February. 2004- 100 -
Reference[1] International Technology Roadmap for Semiconductors 2003 Edition.[2] Keiji Tachikawa, IEDM Technical Digest, pp. (2003)[3] S. Inumiya, K. Sekine, S. Niwa, A. Kaneko, M. Sato, T. Watanabe, H.Fukui, Y. Kamata, M. Koyama, A. Nishiyama, M. Takayanagi, K. Eguchiand Y. Tsunashima, Symposium on VLSI Technology, pp.17-18 (2003).[4] T. Nabatame, K. Iwamoto, H. Ota, K. Tominaga, H. Hisamatsu, T. Yasuda,K. Yamamoto, W. Mizubayashi, Y. Morita, N. Yasuda, M. Ohno, T.Horikawa and A. Toriumi, Symposium on VLSI Technology, pp.25-26(2003).[5] C.H. Choi, S.J. Rhee, T.S. Jeon, N. Lu, J.H. Sim, R. Clark, M. Niwa andD.L. Kwong, IEDM Technical Digest, pp.857-860 (2002).[6] H. Iwai, S. Ohmi, S. Akama, C. Oshima, A. Kikuchi, I. Kashiwagi, J.Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, I. Ueda, A. Kuriyama and Y.Yoshihara, IEDM Technical Digest, pp.625-628 (2002).[7] A. Chin, Y.H. Wu, S.B. Chen, C.C. Liao and W.J. Chen, Symposium onVLSI Technology, pp.16-17 (2000).[8] S. Ohmi, C, Kobayashi, K. Aizawa, S. Yamamoto, E. Tokumitsu, H.Ishihara and H. iwai, Proceedings of ESSDERC, pp.235-238 (2001).[9] U. Schwalke, Y. Stefanov, R. Komaragiri and T. Ruland, Proceedings ofESSDERC, pp.243-246 (2003).[10] S.Guha, E. Cartier, M. A. Gribelyuk, N.A. Bojarczuk and C. Copel,Applied Physics Letters, Volume 77, Number17, 2710 (2000).[11] Shin-ichi Saito, Yasuhiro Shimamoto, Kazuyoshi Torii, Yukiko Manabe,Matty Caymax, Jan Willem Maes, Masahiko Hiratani and Shin’ichiroKimura, Extended Abstracts of SSDM, pp.704-705 (2002)[12] Angus I. Kingon, Jon-Paul Maria, Dwi Wicaksana and Chris Hoffman,IWGI pp36-41 (2001)[13] Jung-Hyoung Lee, Jong Pyo Kim, Jong-Ho Lee, Yun-seok Kim,Hyung-seok Jung, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh,Mun-Mo Jeong Kyu-Taek Hyun, Hion-Suck Baik, Young Su Chung,Xinye Liu, Sasangan Ramanathan, Tom Sidel, Jerald Winkler, AnaLondergan, Hae Young Kim, Jung Min Ha and Nam Kyu Lee, IEDMTechnical Digest, pp221-224 (2002)- 101 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28:
1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30:
In C-V curve, the two type of hyste
Page 31 and 32:
2.2.2 Leakage Current Density-Volta
Page 33 and 34:
2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36:
3.1 IntroductionIn this chapter, th
Page 37 and 38:
3.3 Electrical Characteristics in t
Page 39 and 40:
Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42:
Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44:
3.3.2 Effects of Chemical Oxidation
Page 45 and 46:
3.3.3 Dependence on the Annealing T
Page 47 and 48:
Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50:
Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52:
Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103: AcknowledgementIn the first place,
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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