Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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4.1.4 Summary of the Effects of PMA for Gd2O3 Thin Films withAluminum Upper ElectrodesPMA for Gd2O3 thin films with aluminum upper electrodes were investigated.As a result,1. PMA recovered VFB shift toward positive side same as the case of PMA forLa2O3 thin films and VFB shift was only 0.05 V from theoretical VFB byPMA.2. Contrary to the case of PMA for La2O3 thin films, the higher capacitancevalue than the one of PDA was confirmed by PMA.3. The similar tendency of hysteresis to the case of PMA for La2O3 thin filmswas observed.Finally, the tables of summary in regard to VFB shift and EOT afterannealing at various conditions were shown in Table 4-1 and 4-2 respectively.Table 4-1: Summary of my investigation regarding to VFB shiftDependence onTemperature-PDADependence onTemperature-PMAChemical OxidationTreatment-PDAChemical OxidationTreatment-PMADependence onAnnealing Time-PDADependence onAnnealing Time-PMAOxygenAmbience-PDACompared to NitrogenForming gasAmbience-PDACompared to NitrogenOxygenAmbience-PMACompared to NitrogenForming gasAmbience-PMACompared to NitrogenAluminumGoldPlatinumTo Negave Side not examined not examinedTo Positive Side To Negave SideTo Negave Side To Negave SideTo Positive Side(Up to 300 o C)To Negave SideTo Negave Side No DependenceTo Negave Side(From 400 o C)not examinednot examinednot examinedTo Positive Side No Dependence To Positive SideNo DependenceTo Positive SideSlightlyV FBTo PositiveSidenot examinednot examinedTo Positive SideNo Dependence No Dependence To Positive SideNo Dependence not examined To Negave Side- 92 -
Table 4-2: Summary of my investigation regarding to EOTDependence onTemperature-PDADependence onTemperature-PMAEOTAluminumGoldPlatinumDecrease not examined not examinedIncrease Decrease IncreaseChemical OxidationTreatment-PDANo Dependence No Dependencenot examinedChemical OxidationTreatment-PMADependence onAnnealing Time-PDADependence onAnnealing Time-PMAOxygenAmbience-PDACompared to NitrogenForming gasAmbience-PDACompared to NitrogenOxygenAmbience-PMACompared to NitrogenForming gasAmbience-PMACompared to NitrogenDecrease Decrease not examinedNo Dependence Increase not examinedSlight IncreaseDecreaseNo Dependence Slight IncreaseDecrease(Up to 10minutes)not examinedNo Dependence not examined No DependenceNo Dependence Decrease IncreaseNo Dependence not examined No Dependence- 93 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28:
1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30:
In C-V curve, the two type of hyste
Page 31 and 32:
2.2.2 Leakage Current Density-Volta
Page 33 and 34:
2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36:
3.1 IntroductionIn this chapter, th
Page 37 and 38:
3.3 Electrical Characteristics in t
Page 39 and 40:
Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42:
Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44:
3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95: 4.1.2 Summary of the Investigation
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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