Effect of Post Metallization Annealing for La 2 O 3 Thin Film

of PMA at 300 o C was maintained on a level with the one of as-deposition.And it was also found that the value of EOT in the case of PDA withplatinum upper electrodes became lower as compared with PMA at samecondition likewise for the results of aluminum upper electrodes.Figure 3.54 shows the values of the VFB shift versus annealingtemperature plot for La2O3 thin films with platinum upper electrodes. Itwas found that variations of VFB shift by PMA tended to recover up to 300 o C.However, it was observed that the VFB shifted toward negative side by PMAfrom 400 o C to 600 o C. And it was also observed that the VFB resulting fromPDA shifted toward negative side from the one of as-deposition likewise forthe results of aluminum upper electrodes.2Pt_PMA_300C_10min._N2Pt_PMA_400C_10min._N2Pt_PMA_500C_10min._N2Pt_PMA_600C_10min._N2Pt/La O / n-Si(100)/Al2 3Capacitance (µF/cm 2 )1250 o C depo HF-lastAs-depo. & PMA300 o C to 600 o C10min.N ambient2600 o C500 o C300 o C400 o CIdeal V FB0-1 0 1 2Voltage (V)Figure 3-52: The C-V characteristics dependent on the temperature of PMA- 76 -