Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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2.1.2 Chemical Oxidation TreatmentChemical oxidation treatment on silicon surface is considered as thefine way to obtain the good surface condition and suppress the leakagecurrent. In order to compare with HF-last and investigate the effects ofthem, some of substrates were chemically oxidized by the following processas shown in Figure 2-3.After HF-last treatment, some of substrates were dipped in H2O2 anddipped in UPW for an instant.HF-last treatmentDip in H 2 O 2 for 30 minutesDip in UPW for an instantN 2 blowFigure 2-3: Chemical oxidation treatment- 16 -
2.1.3 Molecular Beam Deposition (MBD) MethodIn this investigation, MBD method using molecular beam epitaxy(MBE) equipment is introduced for rare earth oxides deposition.Depositions of rare earth oxides thin films were performed on siliconsubstrates by using E-beam. The pressure in the MBE chamber duringdepositions was 10 -7 ~10 -5 Pa (10 -9 ~10 -7 Torr). Molecular beam is the onlymethod for the deposition in ultra high vacuum. MBD method has theadvantage of the lower contaminations and damage than other method suchas sputtering or Chemical Vapor Deposition (CVD). Accordingly, it can besaid that MBD method is suitable for research in basic characteristics of thinfilms.Figure 2-4 shows the schematic illustration of MBE equipment usedin this investigation. There are two vacuum chambers. One is loadingchamber where cleaned silicon substrates were loaded and growth chamber.There are four pumps, Turbo-Molecular Pump (TMP) and Rotary Pump (RP)in loading chamber, Titanium Sublimation Pump (TSP) and Ion Pump (IP) ingrowth chamber. There are also four E-guns and targets, and two powersupplies in order to be capable to evaporate two materials in the same time.E-gun acceleration of -5 kV were used in this investigation. The purity of99.999% La2O3 target was used in this investigation. The silicon substrateswere rotated during the deposition for the purpose of uniformity of filmthickness. The film thickness during deposition was monitored with theInficon crystal oscillator sensor. In-situ RHEED system was equipped forcrystallinity analysis at the silicon surface, and quadrupole gas analyzer wasalso equipped for the analysis of the gas in the growth chamber. Themeasurement of this gas detection is based on the mass spectrometry andsome peaks are usually observed at 2, 18, 28, 44 of molecule mass. Thesepeaks are considered to indicate H2, H2O, N2 and CO2. And the intensityratio was about 50:1:3:1. During the heating Silicon substrates, theintensity of H2O was slightly higher than that of CO2 and during deposition,this magnitude relation were reversed.- 17 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19: 2.1.1 1 Wet Cleaning Method of Sili
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72:
V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74:
2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76:
Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78:
3.4.2.5 The comparison with the cas
Page 79 and 80:
3.4.3 Effects of PMA for Platinum U
Page 81 and 82:
4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84:
EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86:
On the other hand, there was almost
Page 87 and 88:
V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90:
Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92:
Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94:
Chapter 4Conclusions- 89 -
Page 95 and 96:
4.1.2 Summary of the Investigation
Page 97 and 98:
Table 4-2: Summary of my investigat
Page 99 and 100:
esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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