Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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4.1 Summary of This InvestigationIn my study, various annealing conditions for three kind of metalupper electrodes, aluminum, gold and platinum were investigated. Finally,obtained data will be summarized by itemizing in following pages as theconclusions.4.1.1 Summary of the Investigation intothe Annealing withAluminum Upper ElectrodesPMA for La2O3 thin films with aluminum upper electrodes were investigated.As a result,1. PDA decreased the values of EOT with increase in annealing temperature,but also shifted the VFB toward negative side.2. PMA recovered VFB shift toward positive side and decreased leakagecurrent as compared with PDA at same temperature, but also increasedthe value of EOT.3. As compared with the case of HF-last treatment, chemical oxidationtreatment suppressed leakage current, decreased the value of EOTslightly and recovered VFB toward positive side in the case of PMA, butshifted VFB toward negative side in the case of PDA.4. Longer time annealing shifted VFB toward negative side in the case ofPDA, but shifted toward positive side in the case of PMA.5. As a result of the examinations into the annealing in three ambiences,nitrogen, oxygen and forming gas, there was almost no dependence onannealing ambience6. The combination of PDA and PMA brought good results, a recovery of VFBshift with suppressing a decrease of capacitance value.- 90 -
4.1.2 Summary of the Investigation into the Annealing with GoldUpper per ElectrodesPMA for La2O3 thin films with gold upper electrodes were investigated. Asa result,1. PMA shifted VFB toward negative side and increased leakage current, butalso decreased the value of EOT.2. As compared with the case of HF-last treatment, chemical oxidationtreatment suppressed leakage current, decreased the value of EOTslightly in the case of PMA, but shifted VFB toward negative side in thecase of both PDA and PMA.3. Longer time annealing increased the value of EOT in the case of PDA, butdecreased in the case of PMA.4. Oxygen ambience decreased the value of EOT as compared with nitrogenambience..4.1.3 Summary of the Investigation into the Annealing withPlatinum Upper ElectrodesPMA for La2O3 thin films with platinum upper electrodes were investigated.As a result,1. PMA recovered VFB shift toward positive side until the annealing at300 o C, but shifted toward negative side from the annealing at 400 o C, andincreased the value of EOT as compared with the case of PDA2. Longer time annealing recovered VFB toward positive side and decreasedthe value of EOT until 10minutes annealing in the case of PMA3. As compared with the annealing in nitrogen ambience, PMA in oxygenambience recovered VFB toward positive side, but increased the value ofEOT.4. As compared with the annealing in nitrogen ambience, the annealing informing gas ambience recovered VFB toward positive side in the case ofPDA, but shifted toward negative side in the case of PMA.- 91 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28:
1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30:
In C-V curve, the two type of hyste
Page 31 and 32:
2.2.2 Leakage Current Density-Volta
Page 33 and 34:
2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36:
3.1 IntroductionIn this chapter, th
Page 37 and 38:
3.3 Electrical Characteristics in t
Page 39 and 40:
Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42:
Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93: Chapter 4Conclusions- 89 -
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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