Effect of Post Metallization Annealing for La 2 O 3 Thin Film

More documents

Recommendations

Info

3.4.1.2 Effects of Chemical Oxidation Treatment for PMA withAluminum Upper ElectrodesChemical oxidation treatment was anticipated that electricalcharacteristics were improved same as the case of PDA. Figure 3-25 showsthe C-V characteristics of PMA dependent on the annealing temperature inthe case of HF-last treatment (Figure 3-25 (a)) and chemical oxidationtreatment (Figure 3-25 (b)) respectively. From rough view, the tendency forthe effect of PMA appeared on chemical oxidation treatment. To be precise,chemical oxidation treatment decreased EOT and increased the width ofhysteresis at 300 o C as compared with HF-last treatment as shown in Figure3-26. And in the case of HF-last, VFB was shifted abruptly with increase inthe temperature of PMA as compared with chemical oxidation treatment asshown in Figure3-27. However, almost the theoretical value of VFB wasobtained by PMA at 300 o C in both treatments as shown in same figure.Capacitance (µF/cm 2 )21Al/La O / n-Si(100)/Al2 3 250 o C 300 o C250 o C depo HF-lastPMA 250-400 o C10minN ambience2 400 o CCapacitance (µF/cm 2 )21Al/La O / n-Si(100)/Al2 3250 o C depo C.O.PMA 250~350 o C10minN ambience2250 o C300 o C350 o C0-2 -1 0 1 2Voltage (V)(a) HF-last0-1.5 -1 -0.5 0 0.5 1 1.5Voltage (V)(b) Chemical oxidationFigure 3-25: the C-V characteristics of PMAdependent on the annealing temperature in the case of(a) HF-last treatment (b) chemical oxidation treatment- 52 -
Equivalent Oxide thickness [nm]32.521.51EOT_HF-lastEOT_C.O.PMAAs-depo.PDAAs-depo.PMAPDA0 100 200 300 400 500Annealing temperature [ o C]Figure 3-26: Plots of EOT dependent on the temperature of PMAV Shift [V]FB0.60.30-0.3-0.6PMA(HF-last)As-depo.(C.O.)PMA(C.O.)As-depo.(HF-last)-0.9VFB Shift_HF-lastPDA(HF-last)VFB Shift_C.O.PDA(C.O.)-1.20 100 200 300 400 500Annealing temperature [ o C]Figure 3-27: Plots of VFB shift dependent on the temperature of PMA- 53 -
Page 2:
CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55: Current Density[A/cm 10 2 PDAAs-de
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
show all

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?