Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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3.4.2.4 Dependence on the Ambience of PMA with Gold UpperElectrodesThe influence of annealing ambience on the electrical characteristicsafter PMA with aluminum upper electrodes, almost no dependence onannealing ambience, was already described in section 3.4.1.4. And up tothis point, all of experiments in terms of PMA with gold upper electrodeswere done fixed to nitrogen ambience. Then, the influence of the annealingambience through PMA was examined same as PMA with the case ofaluminum upper electrodes.Figure 3-47 shows the comparison of the C-V characteristics of PMAbetween nitrogen and oxygen ambience on each annealing time from 0second (spike) to 100 minutes. It was confirmed that there was, roughlyspeaking, nothing different between nitrogen and oxygen ambience in termsof VFB shift. However, the higher capacitance value was observed in thecase of annealing in oxygen ambience. To be precise, the value of EOT inthe case of annealing in oxygen ambience was decreased about 0.2 ~ 0.3 nmcompared to the one in the case of annealing in nitrogen ambience althoughthe value of EOT was not almost changed dependent on annealing ambiencein the case of PDA as shown in Figure 3-48 in which plots of the result ofannealing in oxygen ambience are added to Figure 3-45. And it was alsofound that variations of EOT were almost proportional to the time of PMAand a degree of variation slope was sharper than the one in the case ofnitrogen ambience. However, the tendency dependent on annealing timewas not observed in terms of VFB same as in the case of nitrogen ambience asshown in Figure 3-49 in which plots of the result of annealing in oxygenambience are added to Figure 3-46.- 70 -
Capacitance (µF/cm 2 )21Au_PMA_N2_spikeAu_PMA_O2_spikeAu/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C spikeN & O ambient2 2Ideal V FBCapacitance (µF/cm 2 )21Au_PMA_N2_1min.Au_PMA_O2_1min.Au/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 1min.N & O ambient2 2Ideal V FB0-1 0 1 2Voltage (V)(a) spiked0-1 0 1 2Voltage (V)(b) 1 minuteCapacitance (µF/cm 2 )21Au_PMA_N2_10min.Au_PMA_O2_10min.Au/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 10min.N & O ambient2 2Ideal V FBCapacitance (µF/cm 2 )21Au_PMA_N2_100min.Au_PMA_O2_100min.Au/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 100min.N & O ambient2 2Ideal V FB0-1 0 1 2Voltage (V)(c) 10 minutes0-1 0 1 2Voltage (V)(d) 100 minutesFigure 3-47: The comparison of the C-V characteristics of PMAbetween nitrogen and oxygen ambienceon each annealing time from 0 second to 100 minutes(a) 0 second (spike) (b) 1minute(c) 10minutes(d) 100minutes- 71 -
Page 2:
CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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