Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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3.4.3.4 The Summary of This SectionUp to this point, various annealing conditions for La2O3 thin filmswith platinum upper electrodes were investigated. As the summary ofthese investigations, the comparison of C-V characteristics between PDA andPMA are shown in Figure 3-64. The tendency that PDA increased thecapacitance value but also shifted VFB toward negative side is quite similarto the case of aluminum upper electrodes. However, there were severaldifferences between both behaviors such as a way of recovering the VFB,variation of EOT dependent on the condition of PMA, the range of variationsof EOT and VFB or influence of annealing ambience and so on. Thereforethe reason why PMA with platinum could recover the VFB shift might bedifferent from the ones of aluminum. In order to explain these phenomena,more investigation must be done by adopting other metal material as upperelectrodes.Finally, plots of EOT versus VFB shift is shown in Figure 3-65. Itshould be noted that major plots of VFB shift stayed within -0.4 V. Theseresults could be the evidence that the mechanism of variations of VFB shift inthe case of platinum upper electrodes is different from ones of aluminumupper electrodes because VFB shift varied drastically owing to the annealingconditions in the case of aluminum upper electrodes. And same as the caseof aluminum, trade-off relationship between EOT and VFB shift exists andthere are 3 plots on the line which means the best result, PMA for100minutes in nitrogen ambience, PMA for 10minutes in nitrogen ambienceand PDA for 10 minutes in forming gas ambience. Hence, combining theseannealing conditions could bring much better results such as recovering VFBshift without an increase of EOT.- 86 -
Capacitance (µF/cm 2 )21Pt_As-depo.Pt_PDA_300C_10min._N2Pt_PMA_300C_10min._N2Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastAs-depo.,PDA & PMA300 o C 10min.N ambient2 Ideal V FBCapacitance (µF/cm 2 )21Pt_As-depo.Pt_PDA_300C_10min._F/GPt_PMA_300C_10min._F/GPt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastAs-depo.,PDA & PMA300 o C 10min.F/G ambientIdeal V FB0-0.5 0 0.5 1 1.5 2Voltage (V)0-0.5 0 0.5 1 1.5 2Voltage (V)(a) Nitrogen ambience(b) Forming gas ambienceFigure 3-64: The comparisons of C-V characteristicsbetween PDA and PMA in(a) nitrogen ambience(b) forming gas ambienceEOT [nm]432PDAPt/La O / n-Si(100)/Al2 3 HF-last 250 o C depoT = 5.6 nmphyGood1-0.8 -0.6 -0.4 -0.2 0 0.2V Shift [V]FBPt_As-depo.Pt_PDA_300C_10min._N2Pt_PDA_300C_10min._F/GPt_PMA_400C_10min._N2Pt_PMA_500C_10min._N2Pt_PMA_600C_10min._N2Pt_PMA_300C_10min._O2Pt_PMA_300C_spike_N2Pt_PMA_300C_1min._N2Pt_PMA_300C_10min._N2Pt_PMA_300C_100min._N2Pt_PMA_300C_spike_F/GPt_PMA_300C_1min._F/GPt_PMA_300C_10min._F/GPt_PMA_300C_100min._F/GFigure 3-65: EOT versus VFB shift plots- 87 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28:
1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30:
In C-V curve, the two type of hyste
Page 31 and 32:
2.2.2 Leakage Current Density-Volta
Page 33 and 34:
2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36:
3.1 IntroductionIn this chapter, th
Page 37 and 38:
3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89: Capacitance (µF/cm 2 )21Pt/La O /
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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