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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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3.4.3.3 Dependence on the Ambience <strong>of</strong> PMA with PlatinumUpper ElectrodesUp to this point, all <strong>of</strong> experiments in terms <strong>of</strong> PMA with platinumupper electrodes were done fixed to nitrogen ambience. Then, the influence<strong>of</strong> the annealing ambience through PMA was examined same as PMA withthe case <strong>of</strong> aluminum and gold upper electrodes.Figure 3-58 shows the comparison <strong>of</strong> the C-V characteristics <strong>of</strong> PDAbetween nitrogen and <strong>for</strong>ming gas ambience and PMA between nitrogen,oxygen and <strong>for</strong>ming gas ambience. All <strong>of</strong> samples were annealed <strong>for</strong> 10minutes. It should be noted that the values <strong>of</strong> VFB shift were quitedependent on annealing ambience in the case <strong>of</strong> not only PDA but PMAalthough there were almost no dependence on annealing ambience in terms<strong>of</strong> VFB shift in the case <strong>of</strong> aluminum and gold upper electrodes. Moreover, itwas also found that the annealing in <strong>for</strong>ming gas ambience shifted VFB tonegative side less than the ones in nitrogen ambience in the case <strong>of</strong> PDA.On the other hand, a recovery <strong>of</strong> VFB shift by PMA in <strong>for</strong>ming gas ambiencewas less than the ones by PMA in nitrogen ambience. And the annealing inoxygen ambience brought the best recovery <strong>of</strong> VFB shift but also a decrease <strong>of</strong>capacitance value.Figure 3-59 shows the comparison <strong>of</strong> the C-V characteristics betweennitrogen and <strong>for</strong>ming gas ambience on each time <strong>of</strong> PMA from 0 second to100minutes. On each annealing time, it was confirmed that the annealingin nitrogen ambience made the VFB shift recover more than the ones in<strong>for</strong>ming gas ambience. And the appearance <strong>of</strong> hysteresis classified intomobile charge type in the case <strong>of</strong> spike annealing in <strong>for</strong>ming gas ambience,and charge injection type in the case <strong>of</strong> 100 minutes annealing in nitrogenambience were observed respectively.In order to verify from numerical view, the plots <strong>of</strong> the VFB shiftdependent on annealing time was shown in Figure 3-60. It can beconfirmed that the difference <strong>of</strong> VFB shift between the case <strong>of</strong> nitrogen and<strong>for</strong>ming gas ambience was maintained on almost same level up to theannealing <strong>for</strong> 10 minutes. However, it was also found that variations <strong>of</strong> VFBshift behaved quite different way, toward more positive side in the case <strong>of</strong>nitrogen ambience, and toward negative side in the case <strong>of</strong> <strong>for</strong>ming gasambience, on the annealing <strong>for</strong> 100minutes.- 80 -

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