Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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Capacitance (µF/cm 2 )21As-depo.AlAuPMA450 o CAs-depo.PMA300 o C0-2 -1 0 1 2Voltage (V)Figure 3-51: The comparison of electrical behavior after PMAbetween gold and aluminum upper electrodes.- 74 -
3.4.3 Effects of PMA for Platinum Upper ElectrodesIn former section, PMA with gold upper electrodes were investigatedin order to be compared with PMA with aluminum upper electrodes.Consequently, PMA with these two metal electrodes showed quite differentbehavior after PMA, and also PDA. And although VFB was recovered almostcompletely by PMA at 300 o C for 10 minutes in nitrogen ambience in the caseof aluminum upper electrodes, a recovery of VFB shift was not realized by anyannealing in the case of gold upper electrodes. From these results, it isconceivable that some reaction between aluminum and La2O3 would lead tothe recovery of VFB shift, and also a decrease of capacitance value. In orderto corroborate this supposition, another metal electrode except aluminumshould be examined. In my study, PMA with platinum upper electrodeswere investigated and these results will be described the following pages.3.4.3.1 Dependence on the Temperature of PMA with PlatinumUpper ElectrodesFirstly, dependence on the temperature of PMA with platinum upperelectrodes for La2O3 thin films was investigated same as other metalelectrodes. Figure 3-52 shows the C-V characteristics dependent on thetemperature of PMA for La2O3 thin films with platinum electrodes. Here,all of samples were HF-last treatment and annealed in nitrogen ambience for10 minutes. Annealing temperature from 300 o C to 600 o C was examinedrespectively. It was observed that the excellent C-V characteristic withoutany hysteresis and much VFB shift was observed by PMA at 300 o C. However,the degradation of the C-V characteristics such as an appearance ofhysteresis classified into charge infection type or a decrease of capacitancevalue were also observed with increase in the temperature of PMA withplatinum upper electrodes.Figure 3.37 shows the values of EOT versus annealing temperatureplot for La2O3 thin films with platinum upper electrodes. Here, the resultsof as-deposition and PDA were shown in same graph. It was found thatPMA with platinum upper electrodes increased the value of EOT withincrease in annealing temperature even though the value of EOT in the case- 75 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77: 3.4.2.5 The comparison with the cas
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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