Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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Figure 3-5 shows the plots of EOT dependent on annealingtemperature of PDA. It was observed that EOT decreased proportionally asthe increase of annealing temperature. Moreover, leakage current alsodecreased with decrease in EOT as shown in Figure 3-6. These magnificentresults demonstrate not only the improvement in quality of films by PDA,but also the latent faculties of La2O3 as high-k gate dielectrics.Figure 3-7 shows the plots of VFB shift dependent on the annealingtemperature of PDA. Unfortunately, the value of VFB shift increasedabruptly from 300 o C to 400 o C of PDA and it seems quite difficult to recoverthe flat band voltage shift toward negative side by PDA. Figure 3-8 showsEOT versus VFB shift plots. Although it is desirable to approach toward thelower right side in this graph, experimental plots were headed for the lowerleft side. This phenomenon indicates that there is trade-off relationshipbetween EOT and VFB shift, and that also means that it is so difficult tocombine lower EOT and VFB shift by only PDA process.The dependence on the rising ratio, 75 o C/minute and 400 o C/minute,of PDA was examined. It was confirmed that in the case of PDA, there isalmost no dependence on rising ratio as shown in Figure 3-9EOT [nm]2.221.81.61.4As-depo.300 o CAl/La O / n-Si(100)/Al2 3HF-last 250 o C depo.400 o CAs-depo. & PDA450 o C0 100 200 300 400 500Annealing Temperature [ o C]Figure 3-5: EOT plots dependent on annealing temperature.- 36 -
Current Density [A/cm 2 ]10 2 10 1As-depo.10 0 300 o C400 o CAl/La O / n-Si(100)/Al2 3 HF-last 250 o C depo.As-depo. & PDA450 o C1.4 1.6 1.8 2 2.2EOT [nm]10 -110 -210 -310 -410 -5 GoodFigure 3-6: EOT – Leakage current density plotsV Shift [V]FB-0.6-0.8-1As-depo.300 o CAl/La O / n-Si(100)/Al2 3HF-last 250 o C depo.As-depo. & PDA400 o C 450 o C-1.20 100 200 300 400 500Annealing Temperature [ o C]Figure 3-7: The value of VFB shift dependent on annealing temperature.- 37 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39: Capacitance (µF/cm 2 )21Al/La O /
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92:
Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94:
Chapter 4Conclusions- 89 -
Page 95 and 96:
4.1.2 Summary of the Investigation
Page 97 and 98:
Table 4-2: Summary of my investigat
Page 99 and 100:
esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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