Effect of Post Metallization Annealing for La 2 O 3 Thin Film

More documents

Recommendations

Info

3.4.1.3 Dependence on the Annealing Timeof PMA withAluminum Upper ElectrodesThus far, the time of PMA was fixed on 10 minutes. The time ofannealing temperature should affect VFB same as the case of PDA asdescribed in section 3.3.3, and also should be optimized. The dependence ofPMA on annealing time from 0 second (spike) to 100 minutes wasinvestigated. Here, the temperature of PMA was fixed on 300 o C andannealing ambience was fixed on nitrogen as well taking the results of thedependence on the temperature described in section 3.1.1.1 into account.Figure 3-28 shows the C-V characteristics dependent on the time of PMA.It was confirmed that VFB shift was recovered to positive side as theannealing time. However, hysteresis still remained slightly in each samples.This result indicates that PMA could not eliminate the defects in films andthat led to the type of charge injected hysteresis. Moreover, to makematters worse, the width of hysteresis was expanded widely in the case ofPMA for 100 minutes.2Al/La O / n-Si(100)/Al2 3Capacitance (µF/cm 2 )1250 o C depo HF-lastPMA 300 o Cspike to 100min.N ambient2Al_PMA_N2_spikeAl_PMA_N2_1min.Al_PMA_N2_10min.Al_PMA_N2_100min.0-2 -1.5 -1 -0.5 0 0.5 1 1.5Voltage (V)Figure 3-28: The C-V characteristics dependent on the time of PMA- 54 -
Figure 3-29 shows the plots of VFB shift dependent on the time ofPMA. This graph also contains the plots of As-deposited and PDA samplesdeposited simultaneously. It is confirmed that PMA for aluminum upperelectrodes made VFB exponentially shifted to positive side dependent on thetime of PMA. And it was also confirmed that the dependence of the time ofPMA is much higher than one of PDA as shown in Figure 3-29. As asummary, it can be suggested that the appropriate time of PMA withaluminum upper electrodes for La2O3 thin films is around 10minutes and thevalue VFB shift could be controlled precisely by adjusting the time of PMA.V Shift [V]FB0.60.40.20-0.2-0.4-0.6As-depo.PDA_N2PMA_N2-0.8-110 -1 10 0 10 1 10 2 10 3 10 4Annealing Time [Sec.]Figure 3-29: The plots of VFB shift dependent on the time of PMA- 55 -
Page 2:
CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57: Equivalent Oxide thickness [nm]32.5
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
show all

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?