Effect of Post Metallization Annealing for La 2 O 3 Thin Film

1.1 BackgroundIn this section, the general perspective of the present semiconductortechnology and the background of this investigation will be described in thepages that follow.1.1.1 Background of This StudyIn recent years, a magnificent influence of silicon LSI technology hasappeared in a large number of scenes such as our social, business anddomestic lives, and that has supported essential part of them. The higherperformance and the lower consumption power equipments using silicon LSItechnology like personal computers and cellular phones have been developedwith great force as shown in Figure 1-1. The principal element whichmakes it possible is the improvements of Metal-Oxide-Semiconductor FieldEffect Transistor (MOS FET), especially by miniaturizing the physical size ofthe devices according to scaling method. Scaling method is the way ofshrinking the devices with same factor S as shown in Figure 1-2 and Table1-1. To downsize the devices leads to high speed switching operation andlower power consumption owing to the shrink of the channel length, andwhole performance of LSI system also can becomes higher becauseminiaturizing the devices realizes to contain much higher number oftransistor in the same area, which improve high-speed, high-frequencycharacteristics. Investigating the device for downsizing is hence farimportant and has continued throughout the world.Fig. 1-1: Trends of CPU Clock and RAM Size-2 -