Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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plot of2oxln( J / E ) versus 1/ Eox. The Fowler-Nordheim tunneling emissionhas the strongest dependence on the applied voltage but is essentiallyindependent on the temperature. These plots and/or temperaturedependence thus decide the carrier transport type.V oxΦ PFE cE vMetal Oxides p-SiliconE cE vFigure 2-11: Poole-Frenkel mechanismV oxΦFNE cE vMetal Oxides p-SiliconE cE vFigure 2-12: Fowler-Nordheim mechanism- 28 -
2.2.3 Ellipsometry MethodEllipsometry method was utilized for estimating the thickness of thedeposited rare earth film. The principle of ellipsometry method is to makeuse of the difference of polarization before and after reflection. Figure 2-13shows the plane-polarized light incident on a plane surface. The incidentpolarized light can be resolved into a component p, parallel to the plane ofincidence and a component s, perpendicular to the plane of incidence. Thelight propagates as a fluctuation in electric and magnetic fields at rightangles to the direction of propagation. The reflection coefficientsEP( reflected)R = PE ( incident)(2.9)RSP= ES( reflected)E ( incident)(2.10)Sare not separately measurable. However, the complex reflection ratio ρdefined in terms of the reflection coefficients RP and RS or ellipsometricangles ψ and ∆,R P Sρ = = tan( ψ) ej∆(2.11)Ris measurable. Then, ψ and ∆ are called ellipso parameter.For the air (n0)-thin film (n1)-substrate (n2-jk2) system, where nx is the indexof refraction and kx is the index of extinction coefficient. In the case ofsilicon substrate, n2 and k2 are known, then n1 and film thickness can becalculated from the result of ψ and ∆ measurement.Incident lightDeflectionE pE sψE pDetectorE sAmbience:n 0d 1Film:n 1Substrate:n 2Figure 2-13 Principle of ellipsometry method- 29 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31: 2.2.2 Leakage Current Density-Volta
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84:
EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86:
On the other hand, there was almost
Page 87 and 88:
V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90:
Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92:
Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94:
Chapter 4Conclusions- 89 -
Page 95 and 96:
4.1.2 Summary of the Investigation
Page 97 and 98:
Table 4-2: Summary of my investigat
Page 99 and 100:
esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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