Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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2Al/La O / n-Si(100)/Al2 32Al/La O / n-Si(100)/Al2 3Capacitance (µF/cm 2 )1250 o C depo. HF-lastPMA 300 o C10min. N ambient2400 o C/min.75 o C/min.1250 o C depo. HF-lastPMA 400 o C10min. N ambient2400 o C/min.75 o C/min.0-1 -0.5 0 0.5 1Voltage (V)(a) PMA 300 o C0-1 -0.5 0 0.5 1Voltage (V)(b) PMA 400 o CFigure 3-19: The C-V characteristics Dependent on the rising ratio of PMA at(a) 300 o C(b) 400 o CAl/La O / n-Si(100)/Al2 3Current Density (A/cm 2 )10 010 -210 -410 -675 o C/min.400 o C/min.Al/La O / n-Si(100)/Al2 3250 o C depo. HF-lastPMA 300 o C 10min.N ambient2 75 o C/min.400 o C/min.Current Density (A/cm 2 )10 010 -210 -410 -6250 o C depo. HF-lastPMA 400 o C 10min.N ambient275 o C/min.400 o C/min.75 o C/min.400 o C/min.10 2 -1 -0.5 0 0.5 110 2 Voltage (V)10 -8Voltage (V)(a) PMA 300 o C10 -8-1 -0.5 0 0.5 1(b) PMA 400 o CFigure 3-20: The J-V characteristics Dependent on the rising ratio of PMA at(a) 300 o C(b) 400 o C- 48 -
As the summary of this sub-section, the dependence on thetemperature of PMA, the comparison between PDA and PMA at 300 o C wasshowed in the pages that follow. Figure 3-21 shows the comparison of C-Vcharacteristics between PDA and PMA at 300 o C. Each sample wasannealed in nitrogen ambience for 10minutes. It was observed that VFBshift was only -0.1 V from the theoretical VFB value without surface fixedcharge in the case of PMA, and increase of hysteresis was suppressed under0.03 V. On the other hand, the VFB shift was -0.80 V in the case of PDA.Furthermore, PMA suppressed the leakage current more than 3 orders ofmagnitude as compared with PDA as shown in Figure 3-22. From the above,it can be presumed that the fittest temperature of PMA is around 300 o Cunder the condition of nitrogen ambience and 10 minutes annealing.However, some faults of PMA were also confirmed from these results.One of them is the increase of EOT. Figure 3-23 shows leakage current as afunction of EOT. It was found that PMA had higher value of EOT ascompared with one of PDA. Moreover, PMA would increase the interfacestate density. Figure 3-24 shows the comparison of frequency dependenceon C-V characteristics between PDA and PMA. It was observed that therewas no frequency dependence in the case of PDA. On the other hand,however, it was observed that there was frequency dependence at weakinversion region in the case of PMA. Although the fixed charge densitydramatically decreased by the PMA at 300 o C, interface state density seemsto increase. Further study to reduce the interface state density will berequired.- 49 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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