Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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Capacitance (µF/cm 2 )21Al/La O / n-Si(100)/Al2 3 250 o C depo. HF-lastPMA 200 o C10min. N ambient2Capacitance (µF/cm 2 )10kHz100kHz10kHz100kHz1MHz1MHz00-1 -0.5 0 0.5 1-1 -0.5 0 0.5 1Voltage (V)Voltage (V)21Al/La O / n-Si(100)/Al2 3 250 o C depo. HF-lastPMA 300 o C10min. N ambient2Capacitance (µF/cm 2 )(a) PMA 200 o C210kHz11MHzAl/La O / n-Si(100)/Al2 3250 o C depo. HF-last100kHzPMA 400 o C10min. N ambient02 -1 -0.5 0 0.5 1Voltage (V)Capacitance (µF/cm 2 )21(b) PMA 300 o CAl/La O / n-Si(100)/Al2 3250 o C depo. HF-lastPMA 450 o C10min.N ambient20-1 -0.5 0 0.5 1Voltage (V)1MHz100kHz10kHz(c) PMA 400 o C(d) PMA 450 o CFigure 3-17 Frequency dependence on C-V characteristics of PMA at(a) 200 o C(b) 300 o C(c) 400 o C(d) 450 o C- 46 -
Al/La O / n-Si(100)/Al2 3 250 o C depo. HF-lastAs-depo. & PMA200 o C to 450 o C 10min. N ambient2Current Density (A/cm 2 )10 010 -210 -410 -610 2 -1 -0.5 0 0.5 1450 o C200 o C300 o C400 o Cas-depo450 o C200 o C400 o C300 o C10 -8Voltage (V)Figure 3-18: The J-V characteristics dependent on temperature of PMAFinally, the dependence on the rising ratio, 75 o C/minute and400 o C/minute, of the PMA temperature was examined same as PDA. Incontradistinction to the case of PDA, It was confirmed that the slow risingratio of the PMA temperature made the capacitance value decreased asshown in Figure 3-19. Moreover, it was also confirmed that the slow ratio ofthe PMA temperature made the leakage current increased as shown inFigure 3-20. These results indicate that PMA with aluminum electrodes isconsiderably sensitive to the annealing condition rather than PDA.- 47 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49: Capacitance (µF/cm 2 )210Al/La O /
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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