Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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Capacitance (µF/cm 2 )2Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C spikeN ambient211MHz100kHz10kHz0-0.5 0 0.5 1 1.5 2Voltage (V)(a) spikeCapacitance (µF/cm 2 )21Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 1min.N ambient200 0.5 1 1.5 2 2.5Voltage (V)(b) 1 minute1MHz100kHz10kHzCapacitance (µF/cm 2 )21Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 10min.N ambient2 1MHz100kHz10kHzCapacitance (µF/cm 2 )21Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 100min.N ambient2 1MHz100kHz10kHz0-0.5 0 0.5 1 1.5 2Voltage (V)(c) 10minutes00 0.5 1 1.5 2 2.5Voltage (V)(d) 100 minutesFigure 3-62: Frequency dependence of C-V characteristicsfabricated by nitrogen annealing for(a) spike (b) 1 minutes(c) 10 minutes (d) 100minutes- 84 -
Capacitance (µF/cm 2 )21Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C spikeF/G ambient1MHz100kHz10kHzCapacitance (µF/cm 2 )21Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 1min.F/G ambient1MHz100kHz10kHz0-0.5 0 0.5 1 1.5 2Voltage (V)0-0.5 0 0.5 1 1.5 2Voltage (V)(a) spike(b) 1 minutesCapacitance (µF/cm 2 )21Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 10min.F/G ambient1MHz100kHz10kHzCapacitance (µF/cm 2 )21Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300 o C 100min.F/G ambient1MHz100kHz10kHz0-0.5 0 0.5 1 1.5 2Voltage (V)0-0.5 0 0.5 1 1.5 2Voltage (V)(c) 10 minutes(d) 100 minutesFigure 3-63: Frequency dependence of C-V characteristicsfabricated by forming gas annealing for(a) spike (b) 1 minutes(c) 10 minutes (d) 100 minutes- 85 -
Page 2:
CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28:
1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30:
In C-V curve, the two type of hyste
Page 31 and 32:
2.2.2 Leakage Current Density-Volta
Page 33 and 34:
2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36:
3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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