Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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3.4.2 Effects of PMA for Gold Upper ElectrodesFrom the investigation of PMA with aluminum upper electrodes forLa2O3 thin films, it was found that VFB was recovered to positive side by PMA.However, it was not clear that the reasons of that recovery of VFB wasowing to the PMA itself, covering La2O3 thin films with metal electrodesduring thermal process, or some reactions between La2O3 and aluminum as aresult of annealing with contact one another. Hence, PMA with anotherupper electrode should be investigated.In order to clarify the mechanism of the effect of PMA, PMA with goldupper electrodes was investigated.3.4.2.1 Dependence on the Temperature of PMA with Gold UpperElectrodesFirstly, dependence on the temperature of PMA with gold upperelectrodes for La2O3 thin films was investigated. Figure 3-36 shows the C-Vcharacteristics dependent on the temperature of PMA for La2O3 thin filmswith gold upper electrodes. Here, all of samples were HF-last treatmentand annealed in nitrogen ambience for 10 minutes. Annealing temperaturefrom 300 o C to 450 o C was examined respectively. It was observed that PMAwith gold upper electrodes increased the capacitance value with increase inthe annealing temperature, but also increased VFB shift to negative side withincrease in annealing temperature in contrast with the case of PMA withaluminum upper electrodes.Figure 3.37 shows the values of EOT versus annealing temperatureplot for La2O3 thin films with gold upper electrodes. Here, the results ofAs-deposition and PDA were shown in same graph. It was found that adecrease of EOT caused by PMA was proportional to the annealingtemperature in the case of gold upper electrodes.Figure 3.38 shows the values of the VFB shift versus annealingtemperature plot for La2O3 thin films with gold upper electrodes. It wasfound that variations of the VFB shift caused by PMA were proportional tothe annealing temperature to negative side in the case of gold upperelectrodes. And a range of the VFB shift cause by PMA was less than the- 62 -
case of aluminum electrodes as compared with Figure 3-27.Figure 3.39 shows EOT versus J (leakage current) plot for La2O3 MIScapacitor with gold upper electrodes fabricated by as-deposition, PDA andPMA. In this graph, the leakage currents for all samples were compared at+1V. From this graph, the universal tendency for leakage current to bedependent on EOT was confirmed in the case of gold upper electrodes.Capacitance (µF/cm 2 )Figure 3-36: The C-V characteristics dependent on the temperature of PMAtreated by HF-lastEquivalent Oxide thickness [nm]21450 o C400 o C350 o CIdeal V 300 o FBC0-1 -0.5 0 0.5 1 1.5Voltage (V)32.5Au/La O / n-Si(100)/Al2 3 250 o C depo HF-lastPMA 300-450 o C10minN ambience2PMA21.5As-depo.PDAEOT_HF-last10 100 200 300 400 500Annealing temperature [ o C]Figure 3-37: The values of the EOT shift versus annealing temperature plot- 63 -
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CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65: Capacitance (µF/cm 2 )21PDA 300 o
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86: On the other hand, there was almost
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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