Effect of Post Metallization Annealing for La 2 O 3 Thin Film

More documents

Recommendations

Info

3.4.3.3 Dependence on the Ambience of PMA with PlatinumUpper ElectrodesUp to this point, all of experiments in terms of PMA with platinumupper electrodes were done fixed to nitrogen ambience. Then, the influenceof the annealing ambience through PMA was examined same as PMA withthe case of aluminum and gold upper electrodes.Figure 3-58 shows the comparison of the C-V characteristics of PDAbetween nitrogen and forming gas ambience and PMA between nitrogen,oxygen and forming gas ambience. All of samples were annealed for 10minutes. It should be noted that the values of VFB shift were quitedependent on annealing ambience in the case of not only PDA but PMAalthough there were almost no dependence on annealing ambience in termsof VFB shift in the case of aluminum and gold upper electrodes. Moreover, itwas also found that the annealing in forming gas ambience shifted VFB tonegative side less than the ones in nitrogen ambience in the case of PDA.On the other hand, a recovery of VFB shift by PMA in forming gas ambiencewas less than the ones by PMA in nitrogen ambience. And the annealing inoxygen ambience brought the best recovery of VFB shift but also a decrease ofcapacitance value.Figure 3-59 shows the comparison of the C-V characteristics betweennitrogen and forming gas ambience on each time of PMA from 0 second to100minutes. On each annealing time, it was confirmed that the annealingin nitrogen ambience made the VFB shift recover more than the ones informing gas ambience. And the appearance of hysteresis classified intomobile charge type in the case of spike annealing in forming gas ambience,and charge injection type in the case of 100 minutes annealing in nitrogenambience were observed respectively.In order to verify from numerical view, the plots of the VFB shiftdependent on annealing time was shown in Figure 3-60. It can beconfirmed that the difference of VFB shift between the case of nitrogen andforming gas ambience was maintained on almost same level up to theannealing for 10 minutes. However, it was also found that variations of VFBshift behaved quite different way, toward more positive side in the case ofnitrogen ambience, and toward negative side in the case of forming gasambience, on the annealing for 100minutes.- 80 -
On the other hand, there was almost no dependence on annealingambience in terms of EOT as shown in Figure 3-61.The frequency dependence of C-V characteristics by variousannealing time and ambience were compared to investigate the effect ofannealing ambience. The result of nitrogen and forming gas ambience wereshown in Figure 3-62 and 3-63 respectively. It was observed that in the caseof the annealing in nitrogen, frequency dependence remained at weakinversion region on the all results of annealing time. On the other hand, inthe case of the annealing in forming gas ambience, the frequency dependencegradually decrease with increase in annealing time, and it was completelyeliminated at last by the annealing for 100minutes.Capacitance (µF/cm 2 )21Pt_As-depo.Pt_PDA_300C_10min._F/GPt_PDA_300C_10min._N2Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastAs-depo. &PDA 300 o C 10min.N & F/G2 Ideal V FBCapacitance (µF/cm 2 )21Pt_As-depo.Pt_PMA_300C_10min._F/GPt_PMA_300C_10min._N2Pt_PMA_300C_10min._O2Pt/La O / n-Si(100)/Al2 3 250 o C depo HF-lastAs-depo. & PMA300 o C 10min.N , O 2 2& F/G ambientIdeal V FB0-0.5 0 0.5 1 1.5 2Voltage (V)(a) PDA0-0.5 0 0.5 1 1.5 2 2.5Voltage (V)(b) PMAFigure 3-58: The comparison of C-V characteristics(a) PDA in nitrogen and oxygen ambience(b) PMA in nitrogen, oxygen and forming gas ambience- 81 -
Page 2:
CONTENTSChapter 1 Introduction-----
Page 5 and 6:
Chapter 1Introduction-1 -
Page 7 and 8:
Miniaturization with a scaling fact
Page 9 and 10:
Table 1-2: Electrical Properties fo
Page 11 and 12:
LSI fabrication, such as activation
Page 13 and 14:
Table 1-4 shows the properties of t
Page 15 and 16:
1.3 Purpose of My StudyIt is consid
Page 17 and 18:
Chapter 2FabricationAndCharacteriza
Page 19 and 20:
2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22:
2.1.3 Molecular Beam Deposition (MB
Page 23 and 24:
2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26:
2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28:
1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30:
In C-V curve, the two type of hyste
Page 31 and 32:
2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80: 3.4.3 Effects of PMA for Platinum U
Page 81 and 82: 4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83: EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 87 and 88: V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90: Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92: Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94: Chapter 4Conclusions- 89 -
Page 95 and 96: 4.1.2 Summary of the Investigation
Page 97 and 98: Table 4-2: Summary of my investigat
Page 99 and 100: esults. The second is the time when
Page 101 and 102: AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104: AcknowledgementIn the first place,
Page 105 and 106: Reference[1] International Technolo
show all

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

Create successful ePaper yourself

Delete template?

Save as template?