Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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2.1 Fabrication MethodsThe electrical characteristics of rare earth oxide thin films were evaluated bymanufacturing Metal-Insulator-Semiconductor (MIS) capacitor. Thefabrication flow of MIS capacitors is shown in Figure 2-1. In thisinvestigation, two type of the annealing method were examined. One isPost Deposition Annealing (PDA) and another is Post MetallizationAnnealing (PMA). In the pages that follow, each process will be described indetail.HF-last or Chemical Oxide (C.O.) treatmentLa 2 O 3 deposition (MBE) on n-Si(100)PDA[Post Deposition Annealing]upper electrode deposition (Al, Au or Pt)PMA[Post Metallization Annealing]back electrode deposition (Al)As-deposition PDA PDA+PMAPMAFigure 2-1: Fabrication Flow of MIS capacitors- 14 -
2.1.1 1 Wet Cleaning Method of Silicon SubstratesIt is well known that semiconductor science is highly sensitive tocontaminations or particles. These factors exert exceedingly on electricalcharacteristics. Therefore, every process should be done with thorough care.On the basis of this fact, DI (de-ionized) water had been used through thecleaning of silicon substrates. DI water highly purified and filtered toremove all of ionic, particulate and bacterial contamination. Thetheoretical resistivity of pure water at 25 o C is 18.25 MΩcm. Ultra-purewater (UPW) systems used in this investigation provided UPW with morethan 18.2 MΩcm resistivity.The substrates were basically cleaned by RCA cleaning processproposed by W. kern et al in 1970. This is the wet cleaning method mainlyusing H2O2 and some chemical liquid. Figure 2-2 shows the steps used inmy investigations. Firstly, SPM cleaning was performed in order to removeorganic materials and metal contaminations. SPM were made by mixing96% sulfuric acid (H2SO4) and 30% hydrogen peroxide (H2O2) and their ratiowas H2SO4:H2O2=4:1. And then, the native and/or chemical oxides wereremoved by 1% hydrofluoric acid (HF). Finally, the cleaned substrates weredipped in DI water for an instant. The surfaces of substrates result inhydrogen-terminated which are hydrophobic and tolerant of oxidationsbecause Si-H protect oxygen absorption. This cleaning is called HF-last.Dip in UPW for 10 minuteswith pouring continuouslyDip in SPM for 5 minutesDip in UPW for 10 minuteswith pouring continuouslyDip in 1% HF for 5 minutesDip in UPW for an instantFigure 2-2: Wet cleaning of silicon substrates- 15 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17: Chapter 2FabricationAndCharacteriza
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27 and 28: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 29 and 30: In C-V curve, the two type of hyste
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70:
3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72:
V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74:
2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76:
Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78:
3.4.2.5 The comparison with the cas
Page 79 and 80:
3.4.3 Effects of PMA for Platinum U
Page 81 and 82:
4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84:
EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86:
On the other hand, there was almost
Page 87 and 88:
V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90:
Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92:
Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94:
Chapter 4Conclusions- 89 -
Page 95 and 96:
4.1.2 Summary of the Investigation
Page 97 and 98:
Table 4-2: Summary of my investigat
Page 99 and 100:
esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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