Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
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3.3.4 Dependence on the Ambience <strong>of</strong> PDAFinally, the dependence on the ambience <strong>of</strong> PDA was examined.Since films are exposed in the atmosphere during annealing, the influence <strong>of</strong>the atmosphere <strong>for</strong> PDA should be higher than one <strong>for</strong> PMA if there is somereaction between the ambience and films.Figure 3-14 shows the comparison <strong>of</strong> PDA between annealing innitrogen and oxygen ambience. It was confirmed that there was not anydifference between nitrogen and oxygen ambience. However, it wasobserved that annealing in <strong>for</strong>ming gas ambience slightly suppressed VFBshift to negative side as compared with annealing in nitrogen ambience asshown in Figure 3-15. These results indicate that hydrogen might exertsome influence on the cause <strong>of</strong> fixed charge.Capacitance (µF/cm 2 )321Al_As-depo.Al_PDA_N2_10minAl_PDA_O2_10min.Ideal V FBAl/<strong>La</strong> O / n-Si(100)/Al2 3 250 o C depo HF-lastAs-depo.&PDA 300 o C 10min.N & O ambient2 2 .0-2 -1 0 1Voltage (V)Figure 3-14: The comparison <strong>of</strong> PDA between the annealing innitrogen and oxygen ambience- 42 -
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