Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
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Deposition Ch.Transfer rodTSPSubstratesOxidetargetLoadingCh.TMPBack pressure:~10 -10 TorrDuring deposition:~10 -9 ~10 -7 TorrIPE-gunRPDeposition rate:0.1~1 nm/minWafer size:3 inch availableFigure 2-4: The schematic illustration <strong>of</strong> MBE equipment- 18 -