Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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charged or discharged over a wide variation of applied gate voltage. Thefixed charge density Qf is located near the high-k/Si interface and its origin isconsidered as excess silicon (trivalent silicon) or a loss of electrons fromexcess oxygen centers (non-bridging oxygen) near the high-k/Si interface.This positive Qf causes the C-V curve to shift toward negative side from theideal C-V curve for both n-type and p-type substrates. The magnitude ofthe shift is generally evaluated by the difference between experimental VFBand ideal VFB.CapacitanceC insulatorC FBInversionDepletionC minAccumulationVoltageFigure 2-8: The ideal high-frequency C-V curve of n-type Si MIS capacitor.- 24 -
In C-V curve, the two type of hysteresis exists in dependence on itsdirection. One is the charge injection type, and another is mobile ion typeas shown in Figure 2-9 and 2-10 respecticely. Verifying the type ofhysteresis is greatly important to understand the conditions of films.At a Silicon surface, there are some located states of energy in theforbidden energy gap of silicon because the lattice of bulk silicon and all theproperties associated with its periodicity result in a termination. Theseinterface states capture some charges when the surface potential bendupward in the case of n-type silicon, and these interface states are locatedunder the Felmi level. The amount of trapped charges is consequentlyvaried by the applied voltage. The C-V curve, hence, does not shift toparallel direction compared to the ideal C-V curve. Trapped charges dependon the measured frequency because these trapping or releasing can notfollow the ac voltage swing. These trapped charges affect not only C-Vcharacteristics, but also MISFET characteristics. Surface states reduce theconduction current in MISFET. Furthermore, the trapped electrons andholes located at the interface can act as charged scattering centers for themobile carriers in a surface channel, and thus that could lead lower mobility.Interface states can also act as localized generation-recombination centers.These could lead to generation-recombination leakage currents and affectthe dielectric reliability.- 25 -
Page 2: CONTENTSChapter 1 Introduction-----
Page 5 and 6: Chapter 1Introduction-1 -
Page 7 and 8: Miniaturization with a scaling fact
Page 9 and 10: Table 1-2: Electrical Properties fo
Page 11 and 12: LSI fabrication, such as activation
Page 13 and 14: Table 1-4 shows the properties of t
Page 15 and 16: 1.3 Purpose of My StudyIt is consid
Page 17 and 18: Chapter 2FabricationAndCharacteriza
Page 19 and 20: 2.1.1 1 Wet Cleaning Method of Sili
Page 21 and 22: 2.1.3 Molecular Beam Deposition (MB
Page 23 and 24: 2.1.4 Rapid Thermal Annealing (RTA)
Page 25 and 26: 2.1.5 Vacuum Evaporation MethodAlum
Page 27: 1 1 1 t 1 kTC = C + C = εε+ q ε
Page 31 and 32: 2.2.2 Leakage Current Density-Volta
Page 33 and 34: 2.2.3 Ellipsometry MethodEllipsomet
Page 35 and 36: 3.1 IntroductionIn this chapter, th
Page 37 and 38: 3.3 Electrical Characteristics in t
Page 39 and 40: Capacitance (µF/cm 2 )21Al/La O /
Page 41 and 42: Current Density [A/cm 2 ]10 2 10 1A
Page 43 and 44: 3.3.2 Effects of Chemical Oxidation
Page 45 and 46: 3.3.3 Dependence on the Annealing T
Page 47 and 48: Capacitance (µF/cm 2 )210Al_As-dep
Page 49 and 50: Capacitance (µF/cm 2 )210Al/La O /
Page 51 and 52: Al/La O / n-Si(100)/Al2 3 250 o C d
Page 53 and 54: As the summary of this sub-section,
Page 55 and 56: Current Density[A/cm 10 2 PDAAs-de
Page 57 and 58: Equivalent Oxide thickness [nm]32.5
Page 59 and 60: Figure 3-29 shows the plots of VFB
Page 61 and 62: 3.4.1.4 Dependence on the Ambience
Page 63 and 64: V Shift [V]FB0.60.40.20-0.2-0.4-0.6
Page 65 and 66: Capacitance (µF/cm 2 )21PDA 300 o
Page 67 and 68: case of aluminum electrodes as comp
Page 69 and 70: 3.4.2.2 Effects of Chemical Oxidati
Page 71 and 72: V Shift [V]FB-0.4-0.5-0.6-0.7-0.8-0
Page 73 and 74: 2.62.5EOT [nm]2.42.3As-depo.2.2PDA_
Page 75 and 76: Capacitance (µF/cm 2 )21Au_PMA_N2_
Page 77 and 78: 3.4.2.5 The comparison with the cas
Page 79 and 80:
3.4.3 Effects of PMA for Platinum U
Page 81 and 82:
4Pt/La O / n-Si(100)/Al2 3EOT [nm]3
Page 83 and 84:
EOT [nm]2.82.62.42.221.81.6Pt/La O
Page 85 and 86:
On the other hand, there was almost
Page 87 and 88:
V Shift [V]FB0.2Pt/La O / n-Si(100)
Page 89 and 90:
Capacitance (µF/cm 2 )21Pt/La O /
Page 91 and 92:
Capacitance (µF/cm 2 )21Pt_As-depo
Page 93 and 94:
Chapter 4Conclusions- 89 -
Page 95 and 96:
4.1.2 Summary of the Investigation
Page 97 and 98:
Table 4-2: Summary of my investigat
Page 99 and 100:
esults. The second is the time when
Page 101 and 102:
AluminumAl 2 O 3 or LaAlO 3Al Al Al
Page 103 and 104:
AcknowledgementIn the first place,
Page 105 and 106:
Reference[1] International Technolo
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Effect of Post Metallization Annealing for La 2 O 3 Thin Film

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