Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
Effect of Post Metallization Annealing for La 2 O 3 Thin Film
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
21Au/<strong>La</strong> O / n-Si(100)/Al2 3250 o C depo C.O.PMA 300~450 o C10minN ambience2450 o C400 o C350 o C Ideal V FB300 o C0-1 -0.5 0 0.5 1 1.5Voltage (V)Figure 3-40: The C-V characteristics dependent on the temperature <strong>of</strong> PMAtreated by chemical oxidationEquivalent Oxide thickness [nm]32.521.51PMAPDAAs-depo.PDAPMAAs-depo.EOT_HF-lastEOT_C.O.0 100 200 300 400 500<strong>Annealing</strong> temperature [ o C]Figure 3-41: The values <strong>of</strong> the VFB shift versus annealing temperature plot- 66 -