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IGCAR : Annual Report - Indira Gandhi Centre for Atomic Research

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IGC<br />

<strong>Annual</strong> <strong>Report</strong> 2007<br />

rising partial pressure of<br />

nitrogen gas was maintained.<br />

The compositional depth profile<br />

of this multilayer architecture<br />

was analyzed by Secondary Ion<br />

Mass Spectrometry (SIMS) using<br />

Cs + primary ion beam. The Cs<br />

Ti + and CsN 2+<br />

quasimolecular<br />

complexes were monitored<br />

along with CsO + and CsSi + to<br />

get the compositional variation<br />

as a function of sputter depth.<br />

Fig. 2 shows the composition<br />

depth profiles <strong>for</strong> the elements<br />

Ti, Si, N and O. The N/Ti ratio<br />

increases with increase in<br />

deposition pressure from 5.0 ×<br />

10 -5 mbar, reaches a maximum<br />

<strong>for</strong> films deposited at<br />

5.0 × 10 -2 mbar and then<br />

declines owing to the<br />

preponderance of O 2 at higher<br />

Fig.2 SIMS depth profile of TiN multilayers grown sequentialy on Si<br />

substrate at various deposition pressures by RPLD<br />

Fig.3 High Resolution TEM image of the RPLD grown TiN film<br />

(Insert A) elasto-plastic de<strong>for</strong>mation profile obtained by<br />

nano-indentation (Insert B) selected area electron diffraction pattern<br />

pressures. Thus it can be<br />

concluded that the deposition<br />

pressure of ~10 -2 mbar is the<br />

optimal condition <strong>for</strong> growing<br />

stoichiometric nanostructured<br />

TiN coatings.<br />

The high resolution TEM<br />

image of the TiN film grown on<br />

a NaCl substrate at 2 × 10 -2<br />

mbar and the corresponding<br />

Selected Area Electron<br />

Diffraction (SAED) pattern is<br />

shown in figure 3. These studies<br />

indicated the <strong>for</strong>mation of films<br />

highly oriented in the <br />

and directions. The d-<br />

spacing calculated from the<br />

diffraction pattern matches well<br />

with the literature values<br />

reported in PCPDF data. A<br />

typical nanoindentation profile<br />

of 800 nm thick TiN film coated<br />

on silicon substrate at<br />

2.0× 10 -2 mbar is shown as an<br />

inset in the high resolution TEM<br />

m i c r o s t r u c t u r e .<br />

Nanoindentation studies of thin<br />

films, are aimed at providing<br />

better interpretations of the<br />

elastic modulus, yield strength,<br />

strain hardening and hardness<br />

of the surface only. The<br />

hardness and modulus of the<br />

film at a depth of 80 nm<br />

calculated from the loading<br />

and unloading profile using<br />

Oliver-Pharr technique is 20<br />

GPa and 231 GPa, respectively.<br />

Ef<strong>for</strong>ts are on to synthesize AlN,<br />

ZrN and NbN coatings in<br />

similar way with an aim to<br />

produce multilayered<br />

nanostructured films with<br />

heterolaminate architecture.<br />

150 BASIC RESEARCH

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