Erasmus ECTS Information Package

Erasmus ECTS Information Package
Faculty of EEEA
3213 Course Project on Microprocessors
ECTS credits: 4
Weekly classes: 0lec+0sem+0labs+0ps+cp
Assessment: official defence
Type of exam: oral
Departments involved:
Department of Telecommunications
Faculty of Electrical Engineering, Electronics and Automation
Lecturers:
Assoc. Prof. Ioana Emilova Ruseva, MEng, PhD, Dept. of Telecommunications,
tel.: 888 677, Е-mail: iruseva@ecs.uni-ruse.bg
Assoc. Prof. Nina Vasileva Bencheva, MEng, PhD, Dept. of Telecommunications,
Tel: 888 841, 276 Е-mail: nbencheva@uni-ruse.bg
Abstract:
The course project on the Microprocessor Devices course consolidates the acquired knowledge and gives skills to
the students for independent solving of engineering problems, connected with the design of different
microprocessor systems, their repair and exploitation.
Course content:
Example topics, connected with the design of microprocessor devices of one-chip computers, are discussed; for
example, with universal PID controller (the equation of the PID algorithm is given, which must be programmed).
The project assignment includes hardware design (synthesis of the structure circuit and choice of the operating
processor; analysis of the work regimes and software applications; tasks division of the processor in the time as
main program and subprograms, interrupting programs).
Teaching and assessment:
The students receive individual assignments, containing particular data for the required indicators. Apart from the
regular classes, weekly individual tutorials are envisaged, as well. The explanatory notes of the project contain 10-
15 pages with the following compulsory parts: hardware design, programming and arguments about the chosen
structure, graphical part. The explanatory notes contain a list, which includes details about the assembling of a
given subprogram or interrupting program.
The project is presented during the last week of the semester in front of the lecturer, who evaluates it with a
complex mark, which is formed on the basis of its development and presentation.
3215 Special and Power Semiconductor Components
ECTS credits: 3
Weekly classes: 2lec+0sem+0labs+1ps
Assessment: continuous assessment
Type of exam: written
Departments involved:
Department of Electronics
Faculty of Electrical Engineering, Electronics and Automation
Lecturers:
Assoc. Prof. Valentin Yordanov Dimov, MEng, PhD, Dept of Electronics,
tel.: 888 772, Е-mail: vdimov@ecs.uni-ruse.bg
Abstract:
The Special and Power Semiconductor Components course aims to acquaint the students with the operating of
indicators, power devices, Gunne diodes, solar cells, IMPATT and other semiconductor devices.
The practical exercises aim at consolidating the knowledge from the lectures. They are also an application of the
lectures for solving particular technical problems and include calculation of the parameters of the studied devices.
Course content:
Diode processes at high fields. Silicon powerful transistors and high voltage transistors. Charge connection
devices. Gunne diodes. Powerful MOS transistors. Statical induction transistor. MOS with short channel and with
vertical structure. Light diodes. Liquid crystals. Solar cells. IMPATT diodes. Safety equipment for working in high
voltage and high current.
Teaching and assessment:
The lectures enable the students to get acquainted theoretically with the main physical principles of power
semiconductor devices. Practical exercises show real-life application of the mentioned devices, teach students to
estimate basic parameters of the devices. The continuous assessment in the subject is done during the practice
sessions and includes an entry test, tasks for completion and their practical implementation and submission of the
reports from the practice sessions. The method of assessment includes two written tests, which are held in the
middle and at the end of the semester.
104