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PNNL-13501 - Pacific Northwest National Laboratory

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specialized process control sensors, methods, and<br />

algorithms. Process control sensors consist of a positionscannable<br />

Langmuir probe, multi-point optical plasma<br />

emission monitor, residual gas analysis mass<br />

spectrometer, and standard pressure, temperature, and<br />

quartz micro-balance sensors. These sensors measure, as<br />

a function of the position within the mixed oxygen-metal<br />

plasma, the relative concentrations of neutral and ionized<br />

atomic and molecular species, electron concentration and<br />

temperature substrate temperature, and absolute flux<br />

impingement rate per unit area onto the substrate. The in<br />

situ process monitoring and control strategy follows a<br />

method previously reduced to practice that permits<br />

calculation of film composition, from the plasma<br />

discharge characteristics alone, for reactively sputtered<br />

metal-oxides for compositions ranging all the way from<br />

pure metal to stoichiometric oxide (Affinito and Parsons<br />

1984).<br />

Eventually, the methods and results of this research<br />

should prove applicable to all transparent conductive<br />

oxide materials. Developing solar cell, solar-thermal<br />

control film and flat panel display applications are<br />

specific DOE program needs.<br />

Results and Accomplishments<br />

Since all of the transparent conductive oxide materials<br />

involve oxides of low melting point metals, this work<br />

focused on the most well-known transparent conductive<br />

oxide material, namely indium oxide and indium tin<br />

oxide. Preliminary studies were conducted on a<br />

generalized, hybrid, plasma processing method applicable<br />

to the deposition of In2O3 (indium oxide), SnO2 (tin<br />

oxide), and ZnO (zinc oxide) transparent conductive<br />

oxide single-layer and multilayer thin films and films of<br />

these materials with various other dopant atoms added<br />

(like In2O3[SnO2] and In2O3[ZnO]). Particular emphasis<br />

was placed on films of In2O3(SnO2), known as indium tin<br />

oxide, since indium tin oxide is the most commonly used<br />

transparent conductive oxide material. Indium tin oxide<br />

is also the most thoroughly studied, and well understood,<br />

of the transparent conductive oxide materials. The<br />

process for ZnO was also studied, since it is the<br />

transparent conductive oxide of choice for application as a<br />

transparent electrode in solar cells. Since the conduction<br />

mechanisms, and related optical properties are similar for<br />

all of the transparent conductive oxide materials, the bulk<br />

of the experimental studies focused on In2O3 and indium<br />

tin oxide.<br />

Vapor pressure-temperature calculations, which were<br />

proved accurate for thermal deposition of lithium films at<br />

the <strong>Laboratory</strong>, indicated that the to-be-developed thermal<br />

sources should produce 1000 Å thick transparent<br />

conductive oxide thin films at rates approximately 135<br />

times as high as do the traditional transparent conductive<br />

oxide vacuum deposition techniques that employ<br />

conventional reactive sputtering.<br />

This work was terminated early in the year when the<br />

principal investigator left the <strong>Laboratory</strong> to pursue other<br />

career opportunities.<br />

Reference<br />

Affinito JD and RR Parsons. 1984. “Mechanisms of<br />

voltage-controlled, reactive, planar magnetron sputtering<br />

of Al in Ar/N2 and Ar/O2 atmospheres.” J. Vac. Sci.<br />

Technol., A,2:1275-1284.<br />

Materials Science and Technology 321

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