UC Davis General Catalog, 2006-2008 - General Catalog - UC Davis

242 Engineering: Electrical and Computer Engineering
motion parameters. Geometry and representation of
three-dimensional objects. Offered in alternate
years.—(III.)
209. Multimedia Compression and
Processing (4)
Lecture—3 hours; project—2 hours. Prerequisite:
knowledge of a programming language (Matlab, C,
or C++); Statistics 120, 131A, Engineering Civil &
Environmental 114, or Mathematics 131, or equivalent;
course 106 or 206 recommended. Principles
and practices of state-of-the-art multimedia compression
and processing. State-of-the-art multimedia coding
standards; scalable multimedia coding; new
paradigms in wavelet compression for image and
video data; synthetic-natural hybrid coding. Offered
in alternate years.—II.
210. MOS Analog Circuit Design (3)
Lecture—3 hours. Prerequisite: courses 110B, 111B
and 140B. Analysis and design of MOS amplifiers,
bias circuits, voltage references and other analog
circuits. Stability and compensation of feedback
amplifiers. Introduction to noise analysis in MOS circuits.—I.
(I.)
211. Advanced Analog Circuit Design (3)
Lecture—3 hours. Prerequisite: course 210; Statistics
131A and course 112 recommended. Noise and
distortion in electronic circuits and systems. Application
to communication circuits. Specific applications
include mixers, low-noise amplifiers, power amplifiers,
phase-locked loops, oscillators and receiver
architectures.—II. (II.)
212. Analog MOS IC Design for Signal
Processing (3)
Lecture—3 hours. Prerequisite: course 210. Analysis
and design of analog MOS integrated circuits. Passive
components, single-ended and fully differential
op amps, sampled-data and continuous-time filters.—II.
(II.)
213. Data-Conversion Techniques and
Circuits (3)
Lecture—3 hours. Prerequisite: course 210. Digitalto-analog
and analog-to-digital conversion; component
characteristics and matching; sample-and-hold,
comparator, amplifier, and reference circuits.—III.
(III.)
214. Computer-Aided Circuit Analysis and
Design (3)
Lecture—3 hours. Prerequisite: courses 110A, 110B
and knowledge of FORTRAN or C. Network equation
formulations. Nonlinear DC, linear AC, timedomain
(both linear and nonlinear), steady-state
(nonlinear) and harmonic analysis. DC, AC, and
time-domain sensitivities of linear and nonlinear circuits.
Gradient-based design optimization. Behavioral
simulations. Extensive CAD project.—II. (II.)
215. Circuits for Digital Communications (3)
Lecture—3 hours. Prerequisite: courses 150B and
210 (may be taken concurrently); course 165, 166
or 265 recommended. Analog, digital, and mixedsignal
CMOS implementations of communication-circuit
blocks; gain control, adaptive equalizers, sampling
detectors, clock recovery. Offered in alternate
years.—III.
216. Low Power Digital Integrated Circuit
Design (3)
Lecture—3 hours. Prerequisite: course 118. IC
design for low power and energy consumption. Low
power architectures, logic styles and circuit design.
Variable supply and threshold voltages. Leakage
management. Power estimation. Energy sources,
power electronics, and energy recovery. Applications
in portable electronics and sensors. Thermodynamic
limits.—II. (II.)
218A. Introduction to VLSI Circuits (3)
Lecture—3 hours. Prerequisite: courses 110A and
110B. Theory and practice of VLSI circuit and system
design. Extensive use of VLSI computer-aided design
aids to undertake a VLSI design example.—I.
218B. Multiproject Chip Design (1)
Laboratory—3 hours. Prerequisite: course 218A.
CMOS and NMOS multiproject chip layouts of
projects begun in courses 218A, 212, and 219 are
assembled and submitted to the DARPA/NSF MOSIS
program for fabrication.—II.
218C. IC Testing and Evaluation (1)
Laboratory—3 hours. Prerequisite: courses 218A
and 218B. Chips submitted in course 218B are
tested and evaluated. Issues involving design of ICs
for testibility are discussed.—III.
219. Advanced Digital Circuit Design (3)
Lecture—3 hours. Prerequisite: course 118 or 218A.
Analysis and design of digital circuits. Both bipolar
and MOS circuits are covered. Dynamic and static
RAM cells and sense amplifiers. Advanced MOS
families. Multi-valued logic.—(III.)
221. Analog Filter Design (3)
Lecture—3 hours. Prerequisite: courses 100 and
150A. Design of active and passive filters including
filter specification and approximation theory. Passive
LC filter design will cover doubly-terminated reactance
two-port synthesis. Active filter design will
include sensitivity, op-amp building blocks, cascade,
multi-loop, ladder and active-R filter design. Offered
in alternate years.—(I.)
222. RF IC Design (3)
Lecture—3 hours. Prerequisite: course 132C and
210. Radio frequency (RF) solid-state devices, RF
device modeling and design rules; non-linear RF circuit
design techniques; use of non-linear computeraided
(CAD) tools; RF power amplifier design.—III.
(III.) Pham
228. Advanced Microwave and Antenna
Design Techniques (4)
Lecture—3 hours; laboratory—3 hours. Prerequisite:
course 132B. Theory, design, fabrication, analysis
of advanced microwave devices, antennas. Includes
wideband transformers, tapered networks, stripline
and microstripline broadband, couplers, and
hybrids. Lumped and distributed filter synthesis.
Broadband matching theory applied to microwave
devices. FET amplifiers. Antenna design, analysis of
horns, microstrip, log periodic, arrays, spirals, and
reflectors. Offered in alternate years.—(III.)
230. Electromagnetics (3)
Lecture—3 hours. Prerequisite: course 130B. Maxwell’s
equations, plane waves, reflection and refraction,
complex waves, waveguides, resonant cavities,
and basic antennas.—I. (I.)
232A. Advanced Applied Electromagnetics I
(3)
Lecture—3 hours. Prerequisite: course 132B. The
exact formulation of applied electromagnetic problems
using Green’s functions. Applications of these
techniques to transmission circuits. Offered in alternate
years.—II.
232B. Advanced Applied Electromagnetics
II (4)
Lecture—3 hours; laboratory—3 hours. Prerequisite:
course 132B. Advanced treatment of electromagnetics
with applications to passive microwave devices
and antennas. Offered in alternate years.—(III.)
235. Photonics (4)
Lecture—3 hours; project—1 hour. Prerequisite:
course 230 (may be taken concurrently). Optical
propagation of electromagnetic waves and beams in
photonic components and the design of such devices
using numerical techniques. Offered in alternate
years.—II.
236. Nonlinear Optical Applications (3)
Lecture—3 hours. Prerequisite: course 130B, course
230 (may be taken concurrently). Nonlinear optical
interactions in optical communication, optical information
processing and integrated optics. Basic concepts
underlying optical nonlinear interactions in
materials and guided media. Not open for credit to
students who have completed course 233. Offered
in alternate years.—(I.)
237A. Lasers (3)
Lecture—3 hours. Prerequisite: course 130B or the
equivalent and course 235. Theoretical and practical
description of lasers. Theory of population inversion,
amplification and oscillation using
semiclassical oscillator model and rate equations.
Description and design of real laser system (Not
open for credit to students who have completed
course 226A.) Offered in alternate years.—(I.)
237B. Advanced Lasers (3)
Lecture—3 hours. Prerequisite: course 237A. Quantum
mechanical description of lasers and interactions
of materials with laser light. Relationship to rate
equation approach. Optical Bloch equations and
coherent effects. Theory and practice of active and
passive mode-locking of lasers. Injection locking.
Not open for credit to students who have completed
course 226B. Offered in alternate years.—(II.)
238. Semiconductor Diode Lasers (3)
Lecture—3 hours. Prerequisite: course 245A. Understanding
of fundamental optical transitions in semiconductor
and quantum-confined systems are
applied to diode lasers and selected photonic
devices. The importance of radiative and non-radiative
recombination, simulated emission, excitons in
quantum wells, and strained quantum layers are considered.
Offered in alternate years.—III.
239A. Optical Fiber Communications
Technologies (4)
Lecture—4 hours. Prerequisite: course 130B. Physical
layer issues for component and system technologies
in optical fiber networks. Sources of physical
layer impairments and limitations in network scalability.
Enabling technologies for wavelength-division-multiplexing
and time-division-multiplexing
networks. Optical amplifiers and their impact in optical
networks (signal-to-noise ratio, gain-equalization,
and cascadability).—I. (I.)
239B. Optical Fiber Communications
Systems and Networking (4)
Lecture—4 hours. Prerequisite: course 239A. Physical
layer optical communications systems in network
architectures and protocols. Optical systems design
and integration using optical component technologies.
Comparison of wavelength routed WDM,
TDM, and NGI systems and networks. Case studies
of next generation technologies. Offered in alternate
years.—(II.)
240. Semiconductor Device Physics (3)
Lecture—3 hours. Prerequisite: course 140B. Physical
principles, characteristics and models of fundamental
semiconductor device types, including P-N
and Schottky diodes, MOSFETs and MESFETs Bipolar
Junction Transistors, and light emitters/detectors.—I.
(I.)
241. Advanced Silicon Devices (3)
Lecture—3 hours. Prerequisite: course 140B; course
240 recommended. Use of modern electron device
design to enhance performance of basic device
architectures to satisfy specific requirements in circuits.
High-performance field-effect, and bipolar transistors,
high-frequency devices, solid-state power
devices and field-emission triodes are considered.
Offered in alternate years.—(II.)
242. Advanced Nanostructured Devices (3)
Lecture—3 hours. Prerequisite: courses 130A and
140A. Physics of nano-structured materials and
device operation. Overview of new devices enabled
by nanotechnology; fabrication and characterization
methods; applications of nano-structures and
devices. Offered in alternate years.—(I.) Islam
243. Silicon-on-Insulator (SOI) Technology
(3)
Lecture—3 hours. Prerequisite: course 140B or 240
recommended. SOI (Silicon-on-Insulator) technology
from all major points of view: materials fabrication,
processing technology, device physics, and circuit
basics. Offered in alternate years.—(III.)
244A. Design of Microelectromechanical
Systems (MEMS) (3)
Lecture—3 hours. Prerequisite: course 140A, 140B
or consent of instructor. Theory and practice of
MEMS design. Micromechanical fundamentals,
Quarter Offered: I=Fall, II=Winter, III=Spring, IV=Summer; 2007-2008 offering in parentheses
General Education (GE) credit: ArtHum=Arts and Humanities; SciEng=Science and Engineering; SocSci=Social Sciences; Div=Social-Cultural Diversity; Wrt=Writing Experience