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Abstracts Brochure - CERN

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TUPCH070<br />

TUPCH071<br />

TUPCH072<br />

27-Jun-06 16:00 - 18:00 TUPCH — Poster Session<br />

by itself. The PBPM of this type is appropriate for a front-end with spatial limitation and is expected to be more<br />

advantageous, on the aspects of initial alignment and later maintenance, compared to measuring vertical angles using<br />

two PBPMs. This presentation explains the design details and the measuring principles of the PBPM and discusses<br />

the measured results from the beamline.<br />

Development of Beam Profile Monitor for Cyclotron<br />

K.-H. Park, S.-M. Hong, Y.G. Jung, D.E. Kim, H.-G. Lee, W.W.<br />

Lee (PAL) D.H. An, J.-S. Chai, Y.S. Kim (KIRAMS) B.-K. Kang<br />

(POSTECH)<br />

180<br />

A beam profile monitor was designed and<br />

fabricated to measure the beam shape of<br />

the cyclotron MC50 beam line at KIRAMS.<br />

The sensor module was made of 13 tungsten<br />

wires and they were assembled into an array<br />

type. The sensor wires whose diameter is 1 mm were placed in parallel with the incident beam, while they were<br />

placed in the perpendicular direction to the incident beam in the conventional method. Thus this monitor has a linear<br />

actuator to scan whole beam profile, which moves the sensor module from the dormant to measurement position or<br />

vice versa. The current output of each sensor was amplified using a trans-resistance amplifier which can measure<br />

input current in the range of 1 pA. The amplifier had a resolution of ∼ 20 fA, the temperature drift of ∼0.5 pA/ o C,<br />

and the signal-to-noise ratio greater than 80 dB. Various test results of the amplifier and sensor module assembly are<br />

given in this paper. The measured current profiles of cyclotron beam line at KIRAMS are also given.<br />

Testing the Silicon Photomultiplier for Ionization Profile Monitor<br />

S.V. Barabin, D.A. Liakin, A.Y. Orlov (ITEP) P. Forck, T. Giacomini<br />

(GSI)<br />

A new kind of photonic device is proposed<br />

to be used in the fast operating mode of the<br />

ionization profile monitor. A silicon photomultiplier<br />

device combines the advantages<br />

of photomultipliers and solid-state photo detectors. It provides high sensitivity, wide optical spectrum response,<br />

high bandwidth and absence of 1/f noise component. Those parameters are critical in the IPM with fast readout<br />

feature, which is developing in GSI in collaboration with ITEP, COOSY, MSU and CRYRING laboratories. Very first<br />

investigations were made to obtain detailed parameters of silicon photomultiplier. A testing layout and resulting<br />

performance data are presented in this publication.<br />

New Generation Streak Camera Design and Investigation<br />

The only method for electron bunch duration<br />

A.M. Tron (LPI) T.V. Gorlov, I.G. Merinov (MEPhI)<br />

monitoring with a resolution in the order of<br />

10 fs and less is the method of photochronography<br />

of the bunch incoherent radiation in the frequency range, for example, of visible light and at realizing streak<br />

camera with new principles of its operation*. In the paper the streak camera design for measuring both the electron<br />

bunches and x-ray pulses duration with the mentioned temporal resolution is presented. The results of the camera<br />

investigation, with photoelectron dynamics simulation taking into account space-charge effect and impact of the surface<br />

roughness of a spherical photocathode of the 20-50 micrometers radius (forming a modulating gap of spherical<br />

configuration) on the camera resolution, are presented and discussed.

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