SEIX 17-20 octobre 2005 - Atelier Calcium
SEIX 17-20 octobre 2005 - Atelier Calcium
SEIX 17-20 octobre 2005 - Atelier Calcium
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N<br />
Image area<br />
Multiplication Reg.<br />
Stage number M<br />
Principle of EM-CCD<br />
Store area<br />
Gate 1<br />
e<br />
p<br />
Variable<br />
voltage<br />
Gate<br />
e<br />
Impact<br />
Ionization<br />
e<br />
Electrons are<br />
collected in potential<br />
well and holes escape<br />
either to the substrate<br />
or to the channel stop<br />
Electrons begin to<br />
transfer from Gate 1<br />
to high field region<br />
under the Gate 2.<br />
Under this<br />
condition, multiple<br />
impact ionization<br />
effect starts and<br />
generates multiple<br />
electron and hole<br />
pairs. This process<br />
is repeated with the<br />
multiplication<br />
register pixel<br />
number.<br />
51
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