section 1 - World Intellectual Property Organization

37/2000
14 Sep/sep 2000 PCT Gazette - Section I - Gazette du PCT 13385
(81) AE AL AM AT AU AZ BA BB BG BR BY
CA CH CN CR CU CZ DE DK DM DZ EE
ES FI GB GD GE GH GM HR HU ID IL IN
IS JP KE KG KP KR KZ LC LK LR LS LT
LU LV MA MD MG MK MN MW MX NO
NZ PL PT RO RU SD SE SG SI SK SL TJ
TM TR TT TZ UA UG US UZ VN YU ZA
ZW; AP (GH GM KE LS MW SD SL SZ
TZ UG ZW); EA (AM AZ BY KG KZ MD
RU TJ TM); EP (AT BE CH CY DE DK ES
FI FR GB GR IE IT LU MC NL PT SE);
OA (BF BJ CF CG CI CM GA GN GW ML
MR NE SN TD TG).
Published / Publiée :(c)
(51) 7 H01L 21/20, 29/786
(11) WO 00/54313 (13) A1
(21) PCT/JP00/00161
(22) 14 Jan/jan 2000 (14.01.2000)
(25) ja (26) ja
(30) 11/58842 5 Mar/mar 1999
(05.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
(54) METHOD FOR PRODUCING THIN
FILM SEMICONDUCTOR DEVICE
PROCEDE DE PRODUCTION D’UN
DISPOSITIF A SEMICONDUCTEUR
ET A FILM FIN
(71) SEIKO EPSON CORPORATION [JP/JP];
4–1, Nishi–Shinjuku 2–Chome, Shinjuku–Ku,
Tokyo 163–0811 (JP). MIT-
SUBISHI DENKI KABUSHIKI KAI-
SHA [JP/JP]; 2–3, Marunouchi 2–Chome,
Chiyoda–ku, Tokyo 100–8310 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) MIYASAKA, Mitsutoshi [JP/JP]; Seiko
Epson Corporation, 3–5, Owa 3–Chome,
Suwa–shi, Nagano 392–8502 (JP). OGAWA,
Tetsuya [JP/JP]; Mitsubishi Denki Kabushiki
Kaisha, 2–3, Marunouchi 2–Chome,
Chiyoda–ku, Tokyo 100–8310 (JP). TO-
KIOKA, Hidetada [JP/JP]; Mitsubishi
Denki Kabushiki Kaisha, 2–3, Marunouchi
2–Chome, Chiyoda–ku, Tokyo 100–8310
(JP). SATOH, Yukio [JP/JP]; Mitsubishi
Denki Kabushiki Kaisha, 2–3, Marunouchi
2–Chome, Chiyoda–ku, Tokyo 100–8310
(JP). INOUE, Mitsuo [JP/JP]; Mitsubishi
Denki Kabushiki Kaisha, 2–3, Marunouchi
2–Chome, Chiyoda–ku, Tokyo 100–8310
(JP). SASAGAWA, Tomohiro [JP/JP];
Mitsubishi Denki Kabushiki Kaisha, 2–3,
Marunouchi 2–Chome, Chiyoda–ku, Tokyo
100–8310 (JP).
(74) SUZUKI, Kisaburo et al. / etc.; Seiko
Epson Corporation, Intellectual Property
Dept., 3–5, Owa 3–chome, Suwa–Shi, Nagano
392–8502 (JP).
(81) CN JP KR US; EP (AT BE CH CY DE DK
ES FI FR GB GR IE IT LU MC NL PT SE).
(51) 7 H01L 21/268, 21/20
(11) WO 00/54314 (13) A1
(21) PCT/JP00/01375
(22) 8 Mar/mar 2000 (08.03.2000)
JP
(25) ja (26) ja
(30) 11/63107 10 Mar/mar 1999
(10.03.1999)
(30) 11/90439 31 Mar/mar 1999
(31.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
(54) METHOD AND APPARATUS FOR
LASER HEAT TREATMENT, AND
SEMICONDUCTOR DEVICE
PROCEDE ET APPAREIL DE TRAITE-
MENT THERMIQUE PAR LASER, ET
DISPOSITIF SEMI–CONDUCTEUR
(71) MITSUBISHI DENKI KABUSHIKI
KAISHA [JP/JP]; 2–3, Marunouchi
2–chome, Chiyoda–ku, Tokyo 100–8310
(JP). SEIKO EPSON CORPORATION
[JP/JP]; 4–1, Nishishinjyuku 2–chome,
Shinjyuku–ku, Tokyo 163–0811 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) OGAWA, Tetsuya [JP/JP]; Mitsubishi
Denki Kabushiki Kaisha, 2–3, Marunouchi
2–chome, Chiyoda–ku, Tokyo 100–8310
(JP). TOKIOKA, Hidetada [JP/JP]; Mitsubishi
Denki Kabushiki Kaisha, 2–3,
Marunouchi 2–chome, Chiyoda–ku, Tokyo
100–8310 (JP). SATO, Yukio [JP/JP];
Mitsubishi Denki Kabushiki Kaisha, 2–3,
Marunouchi 2–chome, Chiyoda–ku, Tokyo
100–8310 (JP). INOUE, Mitsuo [JP/JP];
Mitsubishi Denki Kabushiki Kaisha, 2–3,
Marunouchi 2–chome, Chiyoda–ku, Tokyo
100–8310 (JP). SASAGAWA, Tomohiro
[JP/JP]; Mitsubishi Denki Kabushiki Kaisha,
2–3, Marunouchi 2–chome, Chiyoda–ku,
Tokyo 100–8310 (JP). MIYASAKA, Mitsutoshi
[JP/JP]; Seiko Epson Corporation,
3–5, Owa 3–chome, Suwa–shi, Nagano
392–8502 (JP).
(74) FUKAMI, Hisao et al. / etc.; Sumitomo
Bank Minamimori–machi Building, 1–29,
Minamimori–machi 2–chome, Kita–ku,
Osaka–shi, Osaka 530–0054 (JP).
(81) CN KR US; EP (AT BE CH CY DE DK ES
FI FR GB GR IE IT LU MC NL PT SE).
(51) 7 H01L 21/3065
(11) WO 00/54315 (13) A1
(21) PCT/JP00/01293
(22) 3 Mar/mar 2000 (03.03.2000)
(25) ja (26) ja
(30) 11/103037 5 Mar/mar 1999
(05.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
(54) DEVICE FOR PLASMA PROCESSING
DISPOSITIF
PLASMA
DE TRAITEMENT AU
(71) TOKYO ELECTRON LIMITED [JP/JP];
3–6, Akasaka 5–chome, Minato–ku, Tokyo
107–8481 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(71, 72) OHMI, Tadahiro [JP/JP]; 1–17–301,
Komegafukuro 2–chome, Aoba–ku, Sendai–shi,
Miyagi–ken 980–0813 (JP).
JP
JP
JP
(72, 75) HIRAYAMA, Masaki [JP/JP]; 52–103,
Funacho, Wakabayashi–ku, Sendai–shi,
Miyagi 984–0806 (JP).
(74) ITOH, Tadahiko; 32nd floor, Yebisu Garden
Place Tower, 20–3, Ebisu 4–chome, Shibuya–ku,
Tokyo 150–6032 (JP).
(81) JP KR US; EP (AT BE CH CY DE DK ES
FI FR GB GR IE IT LU MC NL PT SE).
Published / Publiée :(a)
(51) 7 H01L 21/311
(11) WO 00/54316 (13) A1
(21) PCT/DE00/00723
(22) 10 Mar/mar 2000 (10.03.2000)
(25) de (26) de
(30) 199 10 984.2 12 Mar/mar 1999
(12.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
DE
(54) METHOD FOR PRODUCING PO-
LYMER STRUCTURES ON A SUB-
STRATE BY MEANS OF AN ETCHING
PROCESS
PROCEDE DE PRODUCTION DE
STRUCTURES POLYMERE SUR UN
SUBSTRAT A L’AIDE D’UN PROCES-
SUS DE GRAVURE
(71) ROBERT BOSCH GMBH [DE/DE]; Postfach
30 02 20, D–70442 Stuttgart (DE).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) HIRTREITER, Josef [DE/DE]; Grossenau
21, D–94234 Viechtach (DE). LAER-
MER, Franz [DE/DE]; Witikoweg 9,
D–70437 Stuttgart (DE). SCHILP, Andrea
[DE/DE]; Seelenbachweg 15, D–73525
Schwaebisch Gmuend (DE). ELSNER,
Bernhard [DE/DE]; Karl–Joos–Strasse 52,
D–70806 Kornwestheim (DE).
(81) JP US; EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE).
Published / Publiée :(c)
(51) 7 H01L 21/316, 21/3105
(11) WO 00/54317 (13) A1
(21) PCT/GB00/00753
(22) 3 Mar/mar 2000 (03.03.2000)
(25) en (26) en
(30) 9905098.1 6 Mar/mar 1999
(06.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
GB
(54) IMPROVEMENTS RELATING TO AN-
NEALING
AMELIORATION CONCERNANT LES
RECUITS
(71) THE SECRETARY OF STATE FOR DE-
FENCE [GB/GB]; Defence Evaluation and
Research Agency, Farnborough, Hampshire
GU14 0LX (GB).
(for all designated States except / pour tous
les États désignés sauf US)