section 1 - World Intellectual Property Organization
section 1 - World Intellectual Property Organization
section 1 - World Intellectual Property Organization
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37/2000<br />
14 Sep/sep 2000 PCT Gazette - Section I - Gazette du PCT 13389<br />
(22) 14 Feb/fév 2000 (14.02.2000)<br />
(25) en (26) en<br />
(30) 99200671.8 8 Mar/mar 1999<br />
(08.03.1999)<br />
(43) 14 Sep/sep 2000 (14.09.2000)<br />
(54) DISPLAY DEVICE<br />
DISPOSITIF D’AFFICHAGE<br />
EP<br />
(71) KONINKLIJKE PHILIPS ELECTRO-<br />
NICS N.V. [NL/NL]; Groenewoudseweg 1,<br />
NL–5621 BA Eindhoven (NL).<br />
(72) TRIEPELS, Jozeph, W.; Prof. Holstlaan 6,<br />
NL–5656 AA Eindhoven (NL). KUSTERS,<br />
Roel, H., L.; Prof. Holstlaan 6, NL–5656<br />
AA Eindhoven (NL). VERWEG, Fransiscus,<br />
G., C.; Prof. Holstlaan 6, NL–5656 AA<br />
Eindhoven (NL). HANDELS, Henri, S., A.;<br />
Prof. Holstlaan 6, NL–5656 AA Eindhoven<br />
(NL). BACHUS, Marcel, S., B.; Prof.<br />
Holstlaan 6, NL–5656 AA Eindhoven (NL).<br />
SCHEUERMANN, Johannes, W., J., M.;<br />
Prof. Holstlaan 6, NL–5656 AA Eindhoven<br />
(NL).<br />
(74) RAAP, Adriaan, Y.; Internationaal Octrooibureau<br />
B.V., Prof Holstlaan 6, NL–5656 AA<br />
Eindhoven (NL).<br />
(81) CN JP; EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE).<br />
(51) 7 H01L 27/112<br />
(11) WO 00/54334 (13) A1<br />
(21) PCT/DE00/00615<br />
(22) 1 Mar/mar 2000 (01.03.2000)<br />
(25) de (26) de<br />
(30) 199 10 353.4 9 Mar/mar 1999<br />
(09.03.1999)<br />
(43) 14 Sep/sep 2000 (14.09.2000)<br />
DE<br />
(54) SEMICONDUCTOR READ–ONLY<br />
MEMORY DEVICE WITH SUB-<br />
STRATE CONTACT AND POLYSI-<br />
LICON BRIDGING CELLS<br />
DISPOSITIF DE MEMOIRE MORTE<br />
A SEMI–CONDUCTEUR AVEC CON-<br />
TACT DE SUBSTRAT ET CELLULE<br />
DE PONTAGE AU SILICIUM POLY-<br />
CRISTALLIN<br />
(71) INFINEON TECHNOLOGIES AG<br />
[DE/DE]; St.–Martin–Strasse 53, D–81541<br />
München (DE).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) MARTIN, Ekkart [DE/DE]; Efeustrasse<br />
17, D–80689 München (DE).<br />
OSTERMAYR, Martin [DE/DE];<br />
Dr.–Mach–Strasse 91, D–85540 Haar (DE).<br />
(74) INFINEON TECHNOLOGIES AG; Zedlitz,<br />
Peter, Postfach 22 13 17, D–80503<br />
München (DE).<br />
(81) CN JP KR US; EP (AT BE CH CY DE DK<br />
ES FI FR GB GR IE IT LU MC NL PT SE).<br />
Published / Publiée :(c)<br />
(51) 7 H01L 27/115, 21/8247<br />
(11) WO 00/54335<br />
(21) PCT/EP00/01173<br />
(13) A1<br />
(22) 14 Feb/fév 2000 (14.02.2000)<br />
(25) en (26) en<br />
(30) 99200697.3 9 Mar/mar 1999<br />
(09.03.1999)<br />
EP<br />
(43) 14 Sep/sep 2000 (14.09.2000)<br />
(54) SEMICONDUCTOR DEVICE COMPRI-<br />
SING A NON–VOLATILE MEMORY<br />
DISPOSITIF SEMI–CONDUCTEUR<br />
COMPORTANT UNE MEMOIRE NON<br />
VOLATILE<br />
(71) KONINKLIJKE PHILIPS ELECTRO-<br />
NICS N.V. [NL/NL]; Groenewoudseweg 1,<br />
NL–5621 BA Eindhoven (NL).<br />
(72) WIDDERSHOVEN, Franciscus, P.; Prof.<br />
Holstlaan 6, NL–5656 AA Eindhoven (NL).<br />
(74) HOUBIERS, Ernest, E., M., G.; Internationaal<br />
Octrooibureau B.V., Prof. Holstlaan<br />
6, NL–5656 AA Eindhoven (NL).<br />
(81) JP KR; EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE).<br />
(51) 7 H01L 27/118, 27/146<br />
(11) WO 00/54336<br />
(21) PCT/US00/06231<br />
(13) A1<br />
(22) 10 Mar/mar 2000 (10.03.2000)<br />
(25) en (26) en<br />
(30) 60/123,582 10 Mar/mar 1999<br />
(10.03.1999)<br />
US<br />
(43) 14 Sep/sep 2000 (14.09.2000)<br />
(54) STITCHED CIRCUITS LARGER THAN<br />
THE MAXIMUM RETICLE SIZE IN<br />
SUB–MICRON PROCESS<br />
CIRCUITS SOUDES PAR PIQURE DE<br />
TAILLE SUPERIEURE A LA TAILLE<br />
MAXIMALE DE RETICULE DANS UN<br />
PROCEDE SUBMICRONIQUE<br />
(71) PHOTOBIT CORPORATION [US/US];<br />
7th floor, 135 North Los Robles Avenue,<br />
Pasadena, CA 91101 (US).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) FOSSUM, Eric, R. [US/US]; 5556 Pinecone<br />
Road, La Crescenta, CA 91214 (US).<br />
ANDERSSON, Anders [SE/US]; 239 South<br />
Madison Avenue, #14, Pasadena, CA 91101<br />
(US). SCHICK, David [US/US]; 137–40 75<br />
Road, Flushing, NY 11367 (US).<br />
(74) HARRIS, Scott, C.; Fish & Richardson<br />
P.C., Suite 500, 4350 La Jolla Village Drive,<br />
San Diego, CA 92122 (US).<br />
(81) AE AL AM AT AU AZ BA BB BG BR BY<br />
CA CH CN CR CU CZ DE DK DM DZ EE<br />
ES FI GB GD GE GH GM HR HU ID IL IN<br />
IS JP KE KG KP KR KZ LC LK LR LS LT<br />
LU LV MA MD MG MK MN MW MX NO<br />
NZ PL PT RO RU SD SE SG SI SK SL TJ<br />
TM TR TT TZ UA UG US UZ VN YU ZA<br />
ZW; AP (GH GM KE LS MW SD SL SZ<br />
TZ UG ZW); EA (AM AZ BY KG KZ MD<br />
RU TJ TM); EP (AT BE CH CY DE DK ES<br />
FI FR GB GR IE IT LU MC NL PT SE);<br />
OA (BF BJ CF CG CI CM GA GN GW ML<br />
MR NE SN TD TG).<br />
(51) 7 H01L 29/00, 23/48, 23/52<br />
(11) WO 00/54337 (13) A1<br />
(21) PCT/US99/28626<br />
(22) 2 Dec/déc 1999 (02.12.1999)<br />
(25) en (26) en<br />
(30) 09/267,889 11 Mar/mar 1999<br />
(11.03.1999)<br />
(43) 14 Sep/sep 2000 (14.09.2000)<br />
US<br />
(54) APPARATUS AND METHOD FOR<br />
AN INTEGRATED CIRCUIT HAVING<br />
HIGH Q REACTIVE COMPONENTS<br />
APPAREIL ET PROCEDE POUR CIR-<br />
CUIT INTEGRE COMPRENANT DES<br />
COMPOSANTS REACTIFS A FAC-<br />
TEUR DE QUALITE ELEVE<br />
(71) ATMEL CORPORATION [US/US]; 2325<br />
Orchard Parkway, San Jose, CA 95131 (US).<br />
(72) ZAVREL, Robert, J., Jr.; 745 Royal Crown<br />
Lane, Colorado Springs, CO 80906 (US).<br />
BAUMANN, Dan, C.; 2970 Dublin Boulevard,<br />
Colorado Springs, CO 80918 (US).<br />
(74) SCHNECK, Thomas; Law Offices of Thomas<br />
Schneck, P.O. Box 2–E, San Jose, CA<br />
95109–0005 (US).<br />
(81) CA CN JP KR NO SG; EP (AT BE CH CY<br />
DE DK ES FI FR GB GR IE IT LU MC NL<br />
PT SE).<br />
Published / Publiée :(b)<br />
(51) 7 H01L 29/778<br />
(11) WO 00/54338 (13) A1<br />
(21) PCT/US00/06258<br />
(22) 11 Mar/mar 2000 (11.03.2000)<br />
(25) en (26) en<br />
(30) 60/124,299 12 Mar/mar 1999<br />
(12.03.1999)<br />
(43) 14 Sep/sep 2000 (14.09.2000)<br />
US<br />
(54) HIGH SPEED GE CHANNEL HETERO-<br />
STRUCTURES FOR FIELD EFFECT<br />
DEVICES<br />
HETEROSTRUCTURES A CANAL GE<br />
GRANDE VITESSE POUR DISPOSI-<br />
TIFS A EFFET DE CHAMP<br />
(71) INTERNATIONAL BUSINESS MA-<br />
CHINES CORPORATION [US/US]; New<br />
Orchard Road, Armonk, NY 10504 (US).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) CHU, Jack, O. [US/US]; 44 Shelbourne<br />
Lane, Manhasset Hills, NY 11040 (US).<br />
(74) TREPP, Robert, M.; IBM Corporation,<br />
<strong>Intellectual</strong> <strong>Property</strong> Law Dept., P.O. Box<br />
218, Yorktown Heights, NY 10598 (US).<br />
(81) CN JP KR SG US; EP (AT BE CH CY DE<br />
DK ES FI FR GB GR IE IT LU MC NL PT<br />
SE).<br />
Published / Publiée :(c)