section 1 - World Intellectual Property Organization

37/2000
13390 PCT Gazette - Section I - Gazette du PCT 14 Sep/sep 2000
(51) 7 H01L 29/786, 21/336
(11) WO 00/54339 (13) A1
(21) PCT/JP00/01441
(22) 9 Mar/mar 2000 (09.03.2000)
(25) ja (26) ja
(30) 11/62767 10 Mar/mar 1999
(10.03.1999)
(30) 11/80051 24 Mar/mar 1999
(24.03.1999)
(30) 11/83314 26 Mar/mar 1999
(26.03.1999)
(30) 11/83316 26 Mar/mar 1999
(26.03.1999)
(30) 11/83319 26 Mar/mar 1999
(26.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
(54) THIN–FILM TRANSISTOR, PANEL,
AND METHODS
THEM
FOR PRODUCING
TRANSISTORS A COUCHES MINCES,
FLAN, ET PROCEDES DE PRODUC-
TION DE CEUX–CI
(71) MATSUSHITA ELECTRIC INDUS-
TRIAL CO., LTD. [JP/JP]; 1006,
Oaza–Kadoma, Kadoma–shi, Osaka
571–8501 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) TAKEHASHI, Shin–itsu [JP/JP];
2–17–12–205, Minamino, Shijonawate–shi,
Osaka 575–0021 (JP). IKUTA, Shigeo
[JP/JP]; 2–3–1–914, Nagaotanimachi, Hirakata–shi,
Osaka 573–0164 (JP). KAWA-
KITA, Tetsuo [JP/JP]; 3–5–10, Kasumisaka,
Kyotanabe–shi, Kyoto 610–0352 (JP). IN-
OUE, Mayumi [JP/JP]; 1–32–30–101, Minamikuzuha,
Hirakata–shi, Osaka 573–1105
(JP). KURAMASU, Keizaburo [JP/JP];
3–12–2, Osumigaoka, Kyotanabe–shi, Kyoto
610–0351 (JP).
(74) OHMAE, Kaname; 2F, Lions Building Ohtemae,
2–3–14, Uchihiranomachi, Chuo–ku,
Osaka–shi, Osaka 540–0037 (JP).
(81) CN GB KR US.
(51) 7 H01L 31/055, 31/0352, G02F 1/35
(11) WO 00/54340 (13) A1
(21) PCT/GB00/00884
(22) 10 Mar/mar 2000 (10.03.2000)
(25) en (26) en
(30) 9905642.6 11 Mar/mar 1999
(11.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
JP
JP
JP
JP
JP
GB
(54) RADIATION CONCENTRATOR FOR A
PHOTOVOLTAIC DEVICE
CONCENTRATEUR DE RAYONNE-
MENT POUR APPAREIL PHOTOVOL-
TAIQUE
(71) IMPERIAL COLLEGE OF SCIENCE,
TECHNOLOGY AND MEDICINE
[GB/GB]; Exhibition Road, London SW7
2AZ (GB).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) BARNHAM, Keith, William, John
[GB/GB]; 7 Ringford House, West Hill,
London SW7 2BZ (GB).
(74) ROBINSON, Nigel, Alexander, Julian; D.
Young & Co., 21 New Fetter Lane, London
EC4A 1DA (GB).
(81) AE AL AM AT AU AZ BA BB BG BR BY
CA CH CN CU CZ DE DK DZ EE ES FI
GB GD GE GH GM HR HU ID IL IN IS
JP KE KG KP KR KZ LC LK LR LS LT
LU LV MD MG MK MN MW MX NO NZ
PL PT RO RU SD SE SG SI SK SL TJ TM
TR TT UA UG US UZ VN YU ZA ZW;
AP (GH GM KE LS MW SD SL SZ TZ UG
ZW); EA (AM AZ BY KG KZ MD RU TJ
TM); EP (AT BE CH CY DE DK ES FI FR
GB GR IE IT LU MC NL PT SE); OA (BF
BJ CF CG CI CM GA GN GW ML MR NE
SN TD TG).
Published / Publiée :(c)
(51) 7 H01L 31/068, 31/0288, 21/033, 21/312,
21/316
(11) WO 00/54341 (13) A1
(21) PCT/EP00/01694
(22) 29 Feb/fév 2000 (29.02.2000)
(25) de (26) de
(30) 199 10 816.1 11 Mar/mar 1999 DE
(11.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
(54) DOTING PASTES FOR PRODUCING P,
P+ AND N, N+ ZONES IN SEMICON-
DUCTORS
PATES DE DOPAGE POUR LA PRO-
DUCTION DE ZONES P, P+ ET N, N+
DANS DES SEMICONDUCTEURS
(71) MERCK PATENT GMBH [DE/DE];
Frankfurter Strasse 250, D–64293 Darmstadt
(DE).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) KÜBELBECK, Armin [DE/DE];
Augartenstrasse 45, D–64625 Bensheim
(DE). ZIELINSKI, Claudia [DE/DE];
Stormstrasse 15, D–64291 Darmstadt (DE).
HEIDER, Lilia [DE/DE]; Lagerstrasse 37a,
D–64347 Riedstadt (DE). STOCKUM,
Werner [DE/DE]; Waldstrasse 59, D–64354
Reinheim (DE).
(74) MERCK PATENT GMBH; D–64271
Darmstadt (DE).
(81) AE AL AM AT AU AZ BA BB BG BR BY
CA CH CN CR CU CZ DE DK DM EE ES
FI GB GD GE GH GM HR HU ID IL IN
IS JP KE KG KP KR KZ LC LK LR LS LT
LU LV MA MD MG MK MN MW MX NO
NZ PL PT RO RU SD SE SG SI SK SL TJ
TM TR TT TZ UA UG US UZ VN YU ZA
ZW; AP (GH GM KE LS MW SD SL SZ
TZ UG ZW); EA (AM AZ BY KG KZ MD
RU TJ TM); EP (AT BE CH CY DE DK ES
FI FR GB GR IE IT LU MC NL PT SE);
OA (BF BJ CF CG CI CM GA GN GW ML
MR NE SN TD TG).
Published / Publiée :(c)
(51) 7 H01L 33/00
(11) WO 00/54342 (13) A1
(21) PCT/US00/03959
(22) 16 Feb/fév 2000 (16.02.2000)
(25) en (26) en
(30) 09/266,219 10 Mar/mar 1999
(10.03.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
US
(54) HIGH BRIGHTNESS NITRIDE–BASED
LEDs
DEL A BASE DE NITRURE A HAUTE
LUMINOSITE
(71) NOVA CRYSTALS, INC. [–/US]; 30
Brown Road, Ithaca, NY 14850 (US).
(72) LO, Yu–Hwa; 146 Lexington Drive, Ithaca,
NY 14850 (US). JI, Chen; 134 Graham
Road #3C5, Ithaca, NY 14850 (US).
EJECKAM, Felix, E.; 700 Warren Road
#17–1C, Ithaca, NY 14850 (US).
(74) STUTIUS, Wolfgang, E. et al. / etc.; Foley,
Hoag & Eliot LLP, One Post Office Square,
Boston, MA 02109–2170 (US).
(81) JP; EP (AT BE CH CY DE DK ES FI FR
GB GR IE IT LU MC NL PT SE).
(51) 7 H01L 35/14
(11) WO 00/54343 (13) A1
(21) PCT/JP00/01469
(22) 10 Mar/mar 2000 (10.03.2000)
(25) ja (26) ja
(30) 11/63074 10 Mar/mar 1999
(10.03.1999)
(30) 11/63088 10 Mar/mar 1999
(10.03.1999)
(30) 11/63093 10 Mar/mar 1999
(10.03.1999)
(30) 11/63099 10 Mar/mar 1999
(10.03.1999)
(30) 11/243118 30 Aug/août 1999
(30.08.1999)
(43) 14 Sep/sep 2000 (14.09.2000)
(54) THERMOELECTRIC CONVERSION
MATERIAL AND METHOD OF PRO-
DUCING THE SAME
MATERIAU DE CONVERSION
THERMOELECTRIQUE ET PROCEDE
DE PRODUCTION ASSOCIE
(71) SUMITOMO SPECIAL METALS CO.,
LTD. [JP/JP]; 7–19, Kitahama 4–chome,
Chuou–ku, Osaka–s1i, Osaka 541–0041 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) SADATOMI, Nobuhiro [JP/JP];
23–8–104, Sho 1–chome, Ibaraki–shi, Osaka
567–0806 (JP). YAMASHITA, Osamu
[JP/JP]; 5–44, Minamikasugaoka 5–chome,
Ibaraki–shi, Osaka 567–0046 (JP). SAIGO,
Tsunekazu [JP/JP]; 1–20–206, Amamiminami
5–chome, Matsubara–shi, Osaka
580–0033 (JP). NOUMI, Masao [JP/JP];
JP
JP
JP
JP
JP