Developments in Ceramic Materials Research
Developments in Ceramic Materials Research
Developments in Ceramic Materials Research
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244<br />
Li Chen<br />
technology moved to the Laboratoire d'Electronique de Technologie et de l'Informatique<br />
(LETI), a research arm of the French Atomic Energy Commission, <strong>in</strong> Grenoble. Earlier field<br />
emission studies showed that electron emission current from the Sp<strong>in</strong>dt micro tip field emitter<br />
was unstable, and might trigger irreversible catastrophic break down of the device [6, 9]. This<br />
was a key technological hurdle that slowed down the FED development. To tackle this<br />
problem, Robert Meyer of LETI patented a method for fabricat<strong>in</strong>g an array of molybdenum<br />
micro tips with a lateral ballast resistive layer [15]. The ballast resistive layer can effectively<br />
reduce the potential difference between the cathode tip and the gate electrode as more<br />
electron current flows out of the emitter [16]. Therefore, it evens out the electron emissions<br />
from the <strong>in</strong>dividual arrays across the display. The ballast resistive layer also helps to reduce<br />
the undesirable electric arc<strong>in</strong>g between the field emitter cathode and phosphor anode, and<br />
thus improve the performance and prolong the life of FED [17, 18]. The LETI group was able<br />
to demonstrate publicly that FEDs constructed with lateral resistive layers could be<br />
manufactured with desired uniformities and had expected lifespans needed for commercial<br />
displays [19]. This stimulated the development of FEDs by many researchers <strong>in</strong> America,<br />
Europe and Asia <strong>in</strong> the 1990’s.<br />
However, the difficulty associated with scale-up of the Sp<strong>in</strong>dt type micro field emitters is<br />
the large size of electron beam evaporator required to deposit molybdenum micro tips. To<br />
ensure the evaporant reaches the cathode faceplate to form sharp cone tips, the distance<br />
required between the molybdenum source and the sample panel holder must be large. A study<br />
performed at Samsung showed that for an evaporator with throw of 72 cm, an angle variation<br />
of 0.8° resulted <strong>in</strong> a tip radius of curvature change of 2 nm over a 6 cm distance along the<br />
substrate [20]. This tip radius variation resulted <strong>in</strong> a 75% decrease <strong>in</strong> emission current for tips<br />
at the edge of the substrate versus those tips <strong>in</strong> the centre. The Sp<strong>in</strong>dt type micro tips based<br />
FED belongs to the first generation FEDs, which relay on th<strong>in</strong> film technology and<br />
semiconductor process<strong>in</strong>g methods. Despite its success <strong>in</strong> achiev<strong>in</strong>g performance, it is still a<br />
high cost technology. In addition, it suffers from scalability problem.<br />
In the development of second generation FEDs, researchers have directed efforts towards<br />
reduc<strong>in</strong>g the overall display cost by replac<strong>in</strong>g the refractory metal emitter material with<br />
alternative cold field emitters. If the switch<strong>in</strong>g voltage for the alternative field emitters is<br />
reduced below the Sp<strong>in</strong>dt type micro tip cathode required gate voltage value, which is<br />
typically between 20~60 V, this allows the use of smaller and cheaper driv<strong>in</strong>g circuits.<br />
<strong>Research</strong> has been <strong>in</strong>vest<strong>in</strong>g materials which possess either a lower work function or material<br />
structures with larger <strong>in</strong>tr<strong>in</strong>sic electric field enhancement.<br />
Among the <strong>in</strong>vestigated material candidates of field emission cathode for FED<br />
application, carbon based materials have experimentally demonstrated the most encourag<strong>in</strong>g<br />
field emission properties [21, 22]. Early <strong>in</strong>vestigation <strong>in</strong>to diamond showed excellent field<br />
emission property, which is believed benefit from the property called negative electron<br />
aff<strong>in</strong>ity [23], which is related to the material’s work function. However, the challenge here is<br />
how to pump electrons <strong>in</strong>to the conduction band for these materials. Diamond like carbon<br />
materials also have negative electron aff<strong>in</strong>ity, and electrons can be emitted <strong>in</strong>to the vacuum at<br />
a very low electric field from the materials [24]. Subsequent <strong>in</strong>vestigation <strong>in</strong>to pure graphitic<br />
materials <strong>in</strong>clud<strong>in</strong>g nanostructure graphite was also proofed to be good field emission<br />
materials [25].<br />
S<strong>in</strong>ce the multi-walled carbon nanotubes was discovered by Sumio Iijima <strong>in</strong> 1991 [26]<br />
and the s<strong>in</strong>gle walled nanotubes was synthesized giv<strong>in</strong>g carbon structures of 1.4 nm <strong>in</strong>