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Developments in Ceramic Materials Research

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44<br />

Z. C. Li, Z. J. Pei and C. Treadwell<br />

vibration power from low level to high level, whereas, at high level of grit size, the cutt<strong>in</strong>g<br />

force rema<strong>in</strong>s about the same with change of vibration power from low level to high level.<br />

Figure 11. Effects on cutt<strong>in</strong>g force <strong>in</strong> RUM of SiC (after [Churi et al., 2007]).<br />

Figure 12. Two-factor <strong>in</strong>teraction effects on cutt<strong>in</strong>g force <strong>in</strong> RUM of SiC (after [Churi et al., 2007]).<br />

The results about ma<strong>in</strong> effects of process parameters on the cutt<strong>in</strong>g force when RUM of<br />

silicon carbide agree well with those when RUM of alum<strong>in</strong>a. For <strong>in</strong>teraction effects, RUM of<br />

silicon carbide shows more complicated <strong>in</strong>teractions between process parameters than RUM<br />

of alum<strong>in</strong>a.

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