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Developments in Ceramic Materials Research

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Field Emission Display on <strong>Ceramic</strong> 259<br />

fabrication technique, scal<strong>in</strong>g this method to large area substrates, especially larger than 400<br />

mm on the side, is still a major technical challenge.<br />

The modern ceramics for eng<strong>in</strong>eer<strong>in</strong>g applications can be considered to be nontraditional.<br />

The new and emerg<strong>in</strong>g family of ceramics is referred to as advanced, new or f<strong>in</strong>e,<br />

and utilise highly ref<strong>in</strong>ed materials and new form<strong>in</strong>g techniques. These new advanced<br />

ceramics, when used as an eng<strong>in</strong>eer<strong>in</strong>g material, possess several properties which can be<br />

viewed as superior to other materials’ properties. The packag<strong>in</strong>g capability for electronics<br />

plus other properties such as chemical <strong>in</strong>ertness, dimensional stability and mechanical<br />

hardness are attractive to FEDs application. In this chapter, the fabrication of the Sp<strong>in</strong>dt type<br />

micro field emitters on ceramic substrate is presented. Systematic electrical characteristics<br />

studies of the micro field emitters on ceramic are reported. In a comparison study, micro field<br />

emitters on ceramic substrate have demonstrated equivalent electrical performance as micro<br />

field emitters on silicon substrate. The ceramic unique packag<strong>in</strong>g capability allows build<strong>in</strong>g<br />

the row and column electrodes and electrical driver to the back of substrate, which makes it<br />

feasible to scale up FED by til<strong>in</strong>g with small FEDs on ceramic.<br />

The on go<strong>in</strong>g research efforts focus on the development of next generation of FEDs, such<br />

as those based on carbon nanotubes cold cathodes. These new materials offer excit<strong>in</strong>g new<br />

possibilities to produce cheaper and more robust displays. However, much of the physics<br />

which governs the operation of the Sp<strong>in</strong>dt type based FEDs rema<strong>in</strong>s unchanged. In other<br />

words, technological hurdles such as long term cathode reliability and high voltage break<br />

down have to be addressed regardless of the type of field emission cathode used. The mature<br />

th<strong>in</strong> film technique could allow the carbon nanotubes cathodes to be built on ceramic easily. It<br />

will not be surprised to see large panel FEDs sale on the market <strong>in</strong> the future as the techniques<br />

are already there.<br />

REFERENCES<br />

[1] A. Tal<strong>in</strong>, K. A. Dean, J. E. Jaskie, Solid State Electronics 2001, 45, 96-976.<br />

[2] S. Itoh, M. Tanaka, T. Tonegawa, J. Vac. Sci. Technol. B, 2004, 22 (3), 1362-1366.<br />

[3] I. Shah, Phys. World, 1997, 45-48.<br />

[4] B. R. Chlamala, Y. Wei, B. E. Gnade, IEEE Spectr. 1998, 35 (4), 42-51.<br />

[5] Robert B. Smith, "Electronics <strong>Developments</strong> for Field Emission Displays," Information<br />

Display February 1998, v.14, no. 2, p. 12.<br />

[6] I. Brodie and C. A. Sp<strong>in</strong>dt, Advances <strong>in</strong> Electronics and Electron Physics 1992, Vol.<br />

83, 1-106.<br />

[7] C. A. Sp<strong>in</strong>dt, C. E. Holland, A. Rosenreen and I. Brodie, IEEE Trans. Electron Devices<br />

1991, 38(10) 2355-2363.<br />

[8] C. A. Sp<strong>in</strong>dt, J. Appl. Phys. 1968, 39 (7), 3504-3505.<br />

[9] P.R. Schwoebel, and I. Brodie, J. Vac. Sci. Technol. B 1995, 13 (4), 1391-1410.<br />

[10] M. E. Crost, K. R. Shoulders and M. H. Z<strong>in</strong>n, 1970, US Patent 3,500,102.<br />

[11] Jules D. Lev<strong>in</strong>e, "Field Emitter Displays," presentation made at the Flat Panel Display<br />

Process<strong>in</strong>g and <strong>Research</strong> Tutorial and Symposium, San Jose Convention Center, June<br />

21-22, 1995<br />

[12] C.A. Sp<strong>in</strong>dt, K.R. Shoulders, and L.N. Heynick, U.S. Patents 3,755,704 (1973).

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