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Developments in Ceramic Materials Research

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46<br />

Z. C. Li, Z. J. Pei and C. Treadwell<br />

Figure 14 shows the <strong>in</strong>teractions effects of process parameters on surface roughness <strong>in</strong><br />

RUM of Silicon carbide. The <strong>in</strong>teraction effect between sp<strong>in</strong>dle speed and grit size is<br />

significant. At the low level of grit size, the change of sp<strong>in</strong>dle speed causes a larger change <strong>in</strong><br />

surface roughness than at the high level of grit size.<br />

4.3. Effects of Process Parameters on Edge Chipp<strong>in</strong>g Size<br />

The edge chipp<strong>in</strong>g size decreases as sp<strong>in</strong>dle speed <strong>in</strong>creases, as shown <strong>in</strong> Figure 15(a).<br />

The edge chipp<strong>in</strong>g size <strong>in</strong>creases as vibration power <strong>in</strong>creases, as shown <strong>in</strong> Figure 15(b). The<br />

edge chipp<strong>in</strong>g size <strong>in</strong>creases as feedrate <strong>in</strong>creases, as shown <strong>in</strong> Figure 15(c). The edge<br />

chipp<strong>in</strong>g size decreases as grit size <strong>in</strong>creases, as shown <strong>in</strong> Figure 15(d).<br />

Figure 16 shows the <strong>in</strong>teractions effects of process parameters on edge chipp<strong>in</strong>g size <strong>in</strong><br />

RUM of Silicon carbide. The <strong>in</strong>teraction effect between sp<strong>in</strong>dle speed and vibration power is<br />

significant. It can be seen that at the high level of vibration power, the change of sp<strong>in</strong>dle<br />

speed causes a smaller change <strong>in</strong> chipp<strong>in</strong>g size than at the low level of vibration power.<br />

a b<br />

c d<br />

Figure 15. Effects on edge chipp<strong>in</strong>g size <strong>in</strong> RUM of SiC (after [Churi et al., 2007]).

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