Developments in Ceramic Materials Research

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248 Li Chen the back contact cathode electrode was formed, which defines the pixel pitch in a vertical direction. The photo resist was stripped off in an acetone solution afterward. The ceramic samples were then loaded in a Plasma Enhanced Chemical Vapour Deposition (PECVD) system DP800 (Oxford Plasma Technology). The PECVD vacuum system was pumped down while the ceramic samples were being heated up. When a process base pressure was achieved and the chamber’s temperature was stabilised at 300°C, a 1.2 µm thick SiO2 thin film was deposited on the ceramic samples surface, using a gas mixture of SiH4 and N2O. After the vacuum chamber was cooling down to room temperature, the system was vented with dry nitrogen. The ceramic samples were re-assembled back on three sample holders, and were loaded in the electron beam evaporation system. This time, the second layer of molybdenum in a thickness of 0.2 µm was deposited at an elevated temperature. This molybdenum layer would be used as the gate electrode, separated from the first molybdenum layer by the SiO2 thin layer. This was followed by another photo lithography patterning using the mask aligner to define the molybdenum gate electrode tracks, which are perpendicular to the previously patterned back contact electrode tracks. The top gate electrode specifies the pixel pitch in the horizontal direction. Here, a wet etching solution was used to etch the molybdenum in the exposed pattern area on the top gate layer. After stripping off the photo resist, a new layer of photo resist was spin coated on the ceramic samples. The photo resist was softly baked, ready for the following critical lithography patterning, which defines the gate hole arrays on the top molybdenum layer. The gate hole arrays should be defined symmetrically within the gate electrode tracks overlapping the back contact cathode electrode. This was achieved through a photo lithography utilizing a GCA 8000 DSW Wafer Stepper. This photo lithography produced 1.5 µm in diameter aperture arrays in the photo resist. Figure 1 shows a high resolution Scanning Electron Microscope (SEM) photograph of a cross section of a patterned hole in the photo resist. Figure 1. Cross section of a 1.5 µm in diameter hole defined in the photo resist. Standing wave caused ripples developed on the profile of photo resist sidewall.
Field Emission Display on Ceramic 249 In order to control the dimension of gate apertures more precisely, instead of using wet etching process, a Reactive Ion Etching (RIE) method was adopted to etch the top molybdenum layer down to the SiO2 through the pattern holes in photo resist. A SF6 reaction gas was used for this molybdenum dry etching process using a facility System 90 (Oxford Plasma Technology), along with the patterned photo resist as a mask. Figure 2 shows a top view of four gate aperture arrays in the gate electrode tracks in the vertical direction, overlapping over the back contact electrode in the horizontal position. To take the advantage of dry etching technique, which produces repeatable high quality thin film through accurate process control, an anisotropic reactive ion etching recipe was developed for etching the SiO2 dielectric between the two molybdenum layers through the small openings of molybdenum gate holes. This SiO2 etching process was performed in a system CME 800 (Oxford Plasma Technology), using the combination feeding gases of CHF3 and C2F6 to form cylinder shape cavities. Figure 3 illustrates a SEM image showing a cross section of a cylinder cavity within the SiO2 after the dry etching process. These small cavities were enlarged by removing more SiO2 through another wet etching process in a buffered HF solution. This further etching process is aimed to clean any SiO2 residue left on the back contact cathode molybdenum. It could cause a serious electrical conductive problem for the molybdenum micro tips to be formed on the back contact electrode tracks if there were any SiO2 residues left. Un-predicted field emission behaviour from the emitters would result when the device is powered up. The photo resist was stripped off afterward. A SEM photograph showing a cross section image of a SiO2 cavity after the buffered HF etching and photo resist stripping is shown in Figure 4. Figure 2. Top view of a gate hole arrays patterned on the intersection of gate electrode tracks and cathode electrode tracks.
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DEVELOPMENTS IN CERAMIC MATERIALS R
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Copyright © 2007 by Nova Science P
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PREFACE Ceramics are refractory, in
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Preface ix crystals is discussed. A
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Preface xi spectra and the directio
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2 Leslie G. Cecil comprehensive dat
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4 Leslie G. Cecil Ringle et al. (19
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6 Leslie G. Cecil The main architec
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8 Leslie G. Cecil can study “the
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10 Leslie G. Cecil Middleton et al.
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12 Leslie G. Cecil The laser ablate
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14 Leslie G. Cecil There are two ge
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16 Leslie G. Cecil distinct recipes
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18 Leslie G. Cecil second group (Fi
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20 Leslie G. Cecil The Vitzil-Orang
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22 Leslie G. Cecil Table 3. Mahalan
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24 Leslie G. Cecil Ixlú and Ch’i
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26 Leslie G. Cecil structures (D. R
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28 Leslie G. Cecil paste and Macanc
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30 Leslie G. Cecil Bieber, A. M. Jr
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32 Leslie G. Cecil Kepecs, S. M., a
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34 Leslie G. Cecil Schele, L., Grub
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36 Z. C. Li, Z. J. Pei and C. Tread
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54 T. T. Basiev, V. A. Demidenko, K
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62 I, % 100 80 60 40 20 0 T. T. Bas
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68 Fluorescence, a.u. 1 T. T. Basie
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70 Fluorescence, a.u. 1 0.1 0.01 0.
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78 k, cm -1 20 18 16 14 12 10 8 6 4
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82 Photon counts 300 250 200 150 10
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84 Fluorescence, a.u. I transfer ,
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86 ln(I transfer (t)) -4.2 -4.4 -4.
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88 Fluorescence, a.u. I transfer ,
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In: Developments in Ceramic Materia
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Synthesis, Spectroscopic and Magnet
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a c Synthesis, Spectroscopic and Ma
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Transmission Transmission Transmiss
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Sm (J/Kmol) Sm (J/Kmol) 15 10 5 Syn
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Intensity (a.u.) Intensity (a.u.) 8
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The Use of Ceramic Pots in Old Wors
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3.2. Wall-in Positions The Use of C
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IACC ( τ ) = t2 ∫ The Use of Cer
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where σ res is the scattering cros
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D50 0.8 0.7 0.6 0.5 0.4 0.3 The Use
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Definition (D50) 1 0.95 0.9 0.85 0.
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Modeling of Thermal Transport in Ce
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q x = Modeling of Thermal Transport
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Page 211 and 212: Modeling of Thermal Transport in Ce
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Page 226 and 227: 212 R. Ramesh, H. Kara, Ron Stevens
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Page 256 and 257: 242 Development of Display Technolo
Page 258 and 259: 244 Li Chen technology moved to the
Page 260 and 261: 246 Li Chen The continuing evolutio
Page 264 and 265: 250 Li Chen Figure 3. Vertical side
Page 266 and 267: 252 Li Chen Figure 6. Molybdenum mi
Page 268 and 269: 254 Li Chen Figure 8(a). I-V curve
Page 270 and 271: 256 Li Chen Figure 9. Life time tes
Page 272 and 273: 258 Figure 11(a). Plasma generated
Page 274 and 275: 260 Li Chen [13] C.A. Spindt, K.R.
Page 276 and 277: 262 S. Ardizzone, C. L. Bianchi, G.
Page 295 and 296: A absorption spectra, 66, 67, 77, 7
Page 297 and 298: correlation function, 156 corrosion
Page 299 and 300: group membership, 13, 20, 21, 22, 2
Page 301 and 302: microstructure(s), x, xi, 73, 74, 2
Page 303 and 304: efraction index, 61 refractive inde
Page 305 and 306: time, vii, ix, 1, 3, 7, 8, 11, 26,
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Developments in Ceramic Materials Research

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