Developments in Ceramic Materials Research

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254 Li Chen Figure 8(a). I-V curve from a micro field emitter array. Emission current Ie (unit: ampere) and leakage current Ig (unit: ampere) via gate voltage Vg (unit: volt) up to 150 V. Figure 8(b). Fowler-Nordheim plot indicates the field emission mechanism.
Field Emission Display on Ceramic 255 In this figure, the curve shows a gate potential voltage ramped from 80 V up to 150 V, with increment of 1 V in step. The leakage current value was far below 1% of the emission current value for the whole course, indicating a good quality of the dielectric insulating layer. Field emission can be described in physics by the Fowler-Nordheim equation [37], which can be written in a simple form as: I = aV b − 2 V e (1.1) where I – emission current V – applied electric field potential voltage a and b are treated as constants that are related with the emitting area and geometric factor of the emitter. Equation (1.1) can be rewritten in another mathematics function as the following: ⎛ I ⎞ b ln⎜ = − ln a 2 ⎟ ⎝V ⎠ V (1.2) Ideally plotting ln(I/V 2 ) versus 1/V should yield a straight line. In fact, this linear form of Fowler-Nordheim plot is widely used in practice to distinguish field emission mechanism from other electron emission mechanisms. Converting the I-V curve into the function ln(I/V 2 ) versus 1/V gives Fowler-Nordheim plot. Figure 8 (b) shows the Fowler-Nordheim plot version of the I-V curve in Figure 8 (a). The linear curve proves the nature of field emission mechanism from the micro field emitters. To use the micro field emitters for display application, it is important to study the emission stability and life time characteristics. In the stability test, individual pixel of the micro field emitters was randomly chosen and was applied to a fixed gate potential voltage while the emission current was monitored over a period of time. A LabView test graph showing an emission current trace for a length of 17.5 hours from a pixel is illustrated in Figure 9. The data were acquired after a preliminary tip cleaning process at a high emission current of ~8×10 -5 A by keeping the gate voltage at 155 V for 30 seconds, followed by reducing the gate potential down to a lower value of 150 V for this life time test. The emission current and the leakage current data were collected, averaged and stored in memory every minute under the control of the automatic data acquisition system. The leakage current value is well below 1% of the emission current over the entire test period, indicating a high quality SiO2 insulating layer. In order to investigate the uniformity of emission current from the micro field emitters on ceramic substrate, a comparison study with micro field emitters on silicon wafer was performed. To do this, an identical fabrication procedure to produce micro field emitters on ceramic substrate was applied to silicon wafers. The wafers were diced into the same dimension as the ceramic substrate. After a surface cleaning treatment, a thin dielectric layer of SiO2 was deposited using PECVD onto the silicon substrates to insulate the surface. Then the silicon substrates went through the same batch process along with the ceramic substrates for micro field emitters’ fabrication.
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DEVELOPMENTS IN CERAMIC MATERIALS R
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Copyright © 2007 by Nova Science P
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PREFACE Ceramics are refractory, in
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Preface ix crystals is discussed. A
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Preface xi spectra and the directio
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2 Leslie G. Cecil comprehensive dat
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4 Leslie G. Cecil Ringle et al. (19
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6 Leslie G. Cecil The main architec
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8 Leslie G. Cecil can study “the
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10 Leslie G. Cecil Middleton et al.
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12 Leslie G. Cecil The laser ablate
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14 Leslie G. Cecil There are two ge
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16 Leslie G. Cecil distinct recipes
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18 Leslie G. Cecil second group (Fi
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20 Leslie G. Cecil The Vitzil-Orang
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22 Leslie G. Cecil Table 3. Mahalan
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24 Leslie G. Cecil Ixlú and Ch’i
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26 Leslie G. Cecil structures (D. R
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28 Leslie G. Cecil paste and Macanc
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30 Leslie G. Cecil Bieber, A. M. Jr
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32 Leslie G. Cecil Kepecs, S. M., a
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34 Leslie G. Cecil Schele, L., Grub
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36 Z. C. Li, Z. J. Pei and C. Tread
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62 I, % 100 80 60 40 20 0 T. T. Bas
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68 Fluorescence, a.u. 1 T. T. Basie
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70 Fluorescence, a.u. 1 0.1 0.01 0.
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78 k, cm -1 20 18 16 14 12 10 8 6 4
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82 Photon counts 300 250 200 150 10
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84 Fluorescence, a.u. I transfer ,
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86 ln(I transfer (t)) -4.2 -4.4 -4.
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88 Fluorescence, a.u. I transfer ,
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In: Developments in Ceramic Materia
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Synthesis, Spectroscopic and Magnet
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a c Synthesis, Spectroscopic and Ma
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Transmission Transmission Transmiss
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Sm (J/Kmol) Sm (J/Kmol) 15 10 5 Syn
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Intensity (a.u.) Intensity (a.u.) 8
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The Use of Ceramic Pots in Old Wors
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IACC ( τ ) = t2 ∫ The Use of Cer
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where σ res is the scattering cros
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D50 0.8 0.7 0.6 0.5 0.4 0.3 The Use
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Definition (D50) 1 0.95 0.9 0.85 0.
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Modeling of Thermal Transport in Ce
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q x = Modeling of Thermal Transport
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Page 256 and 257: 242 Development of Display Technolo
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Page 260 and 261: 246 Li Chen The continuing evolutio
Page 262 and 263: 248 Li Chen the back contact cathod
Page 264 and 265: 250 Li Chen Figure 3. Vertical side
Page 266 and 267: 252 Li Chen Figure 6. Molybdenum mi
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Page 272 and 273: 258 Figure 11(a). Plasma generated
Page 274 and 275: 260 Li Chen [13] C.A. Spindt, K.R.
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Page 295 and 296: A absorption spectra, 66, 67, 77, 7
Page 297 and 298: correlation function, 156 corrosion
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Page 301 and 302: microstructure(s), x, xi, 73, 74, 2
Page 303 and 304: efraction index, 61 refractive inde
Page 305 and 306: time, vii, ix, 1, 3, 7, 8, 11, 26,
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Developments in Ceramic Materials Research

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