Third Day Poster Session, 17 June 2010 - NanoTR-VI

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P light
Poster Session, Thursday, June 17
Theme F686 - N1123
ZnO/CuR2RO Inorganic Solar Cells
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0BYakup HameP P, UTeoman ÖzdalUP P*, Hüseyin arP P, Erdem AslanP
1P and Hüsnü nci 1
P
PMustafa Kemal University, Electric-Electronic Engineering Department, skenderun, Hatay, Turkey
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Abstract -In this work thin film photovoltaic produced and investigated. Bilayer structured device has ZnO and CuR2RO inorganic oxide layers
as n-type and p-type materials, respectively. Both oxide layers deposited by electrochemical deposition method on to pre cleaned Indium tin
oxide (ITO) coated glass substrate. As a top electrode Al thermally coated and ITO/ZnO/CuR2RO/Al structure obtained. Finally, I-V curve of
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thin film obtained and investigated by illumination under 100 mW/cmP intensity.
There has been an active search for cost-effective
photovoltaic devices since the development of the first solar
cells in the 1950s [1]. A significant fraction of the cost of
solar panels comes from the photoactive materials and
sophisticated, energy-intensive processing technologies.
Zinc oxide (ZnO), as a transparent conductive oxide, is one
of the most attractive materials for last several decays. ZnO,
has a wide field application for industrial and scientific
researches due to transparent and conductive properties. ZnO
has a big interest because of bandgap of 3.3 eV at T300 KT
which is an advantage for Toptoelectronic applications.
However, ZnO has large exiton-binding energy (T60 meV).
ZnO thin films have attracted many researchers to work on
because of its unique electrical, optical and acoustic
characteristics that making it suitable for various fields of
applications especially in photovoltaics [2]. ZnO films which
deposited by ECD method generally obtain in aqueous alkali
or neutral zinc salt solvents.
Cuprous oxide (CuR2RO), as a non-toxic and active electrode
has a big attractive for photovoltaic applications.
CuR2RO semiconductor material has an ability to absorb visible
wavelength with band-gap energy of 2,1 eV. Furthermore, it
has been predicated that CuR2RO is promising for photovoltaic
applications, with a theoretical energy conversion efficiency
of 20% [3]. CuR2RO thin films have been prepared by various
techniques like thermal oxidation, chemical vapor deposition
(CVD), anodic oxidation, reactive sputtering, pulse laser
deposition, electrodeposition, plasma oxidation [4-10].
Cathodic electrodeposition of CuR2RO is a good method to
control easily the particle size and the film thickness [11].
ITO coated glass sonicated in acetone, 2-propanol, ethanol
and pure water for 15 minutes respectively. Deposition of
ZnO and CuR2RO obtained in a three electrode system. During
the deposition, solution unstirred and temperature kept
constant. Finally, Al top electrode thermally coated on to
device as an ohmic contact.
Electrical characterization of device obtained under 100
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mW/cmP
Plight intensity. Current-Voltage (IRSCR-VROCR)
measurements of device obtained with Keithley 4200HT-TTSCSTT
(semiconductor characterization systemTH). Scanning electron
microscopy (SEM) image of ZnO layer and estimated
schematic of ITO/ZnO/CuR2RO/Al thin film structure which
fabricated in room temperature given in Figure 1 and Figure 2
respectively.
Figure 2. ITO/ZnO/CuR2RO/Al structure.
In this work ZnO/CuR2RO bilayer solar cell fabricated and
electrical and photovoltaic properties investigated.
This work is partially supported by The Scientific and
Technical Research Council of Turkey; with project reference
Number 107M270.
*Corresponding author: HTteomanozdal@hotmail.comT
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Figure 1. SEM image of ZnO layer.
6th Nanoscience and Nanotechnology Conference, zmir, 2010 762